Using an Al reaction layer to control the morphology and optical properties of ZnO nanorods and nanowalls

Jian Fu Tang; Sheng Yuan Chu; Yang Ming Lu; Zong Liang Tseng

doi:10.1016/j.matlet.2016.02.083

Using an Al reaction layer to control the morphology and optical properties of ZnO nanorods and nanowalls

Jian Fu Tang, Sheng Yuan Chu, Yang Ming Lu, Zong Liang Tseng

Research output: Contribution to journal › Article › peer-review

Abstract

This paper reports a novel method for the synthesis of ZnO nanorods, nanowalls, and nanorod/wall structures directly on a substrate, using a simple chemical bath deposition process. The morphology of the resulting structures can be altered simply by adjusting the thickness of an Al thin film, which is used as a doping source. Transmission electron microscopy (TEM) and selected area electron diffraction (SAED) measurements revealed that the resulting ZnO formations possess a wurtzite structure. Inductively coupled plasma mass spectrometry (ICP-MS) revealed that the Al doping of the nanostructures is between 2.1 at% and 4.9 at%. The predominance of violet-blue emissions in the CL spectra of Al-doped and undoped ZnO indicates the presence of interstitial zinc (Zn_i) and zinc vacancies (V_Zn). In this study, the work function was adjusted between 3.81 and 4.39 eV simply by varying the thickness of the Al reaction source.

Original language	English
Pages (from-to)	195-199
Number of pages	5
Journal	Materials Letters
Volume	171
DOIs	https://doi.org/10.1016/j.matlet.2016.02.083
Publication status	Published - 2016 May 15

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Using an Al reaction layer to control the morphology and optical properties of ZnO nanorods and nanowalls",

abstract = "This paper reports a novel method for the synthesis of ZnO nanorods, nanowalls, and nanorod/wall structures directly on a substrate, using a simple chemical bath deposition process. The morphology of the resulting structures can be altered simply by adjusting the thickness of an Al thin film, which is used as a doping source. Transmission electron microscopy (TEM) and selected area electron diffraction (SAED) measurements revealed that the resulting ZnO formations possess a wurtzite structure. Inductively coupled plasma mass spectrometry (ICP-MS) revealed that the Al doping of the nanostructures is between 2.1 at% and 4.9 at%. The predominance of violet-blue emissions in the CL spectra of Al-doped and undoped ZnO indicates the presence of interstitial zinc (Zni) and zinc vacancies (VZn). In this study, the work function was adjusted between 3.81 and 4.39 eV simply by varying the thickness of the Al reaction source.",

author = "Tang, {Jian Fu} and Chu, {Sheng Yuan} and Lu, {Yang Ming} and Tseng, {Zong Liang}",

note = "Funding Information: This research was supported by the Ministry of Science and Technology of Taiwan ( 102−2221-E-006−216-MY3 and 102−2221-E-006−186-MY3 ) and Mr. Shyue-Yen Yau (National Cheng Kung University, Taiwan) for assistance in the use of TEM during the preparation of this paper. Publisher Copyright: {\textcopyright} 2016 Published by Elsevier B.V. Copyright: Copyright 2018 Elsevier B.V., All rights reserved.",

year = "2016",

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doi = "10.1016/j.matlet.2016.02.083",

language = "English",

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AU - Chu, Sheng Yuan

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AU - Tseng, Zong Liang

N1 - Funding Information: This research was supported by the Ministry of Science and Technology of Taiwan ( 102−2221-E-006−216-MY3 and 102−2221-E-006−186-MY3 ) and Mr. Shyue-Yen Yau (National Cheng Kung University, Taiwan) for assistance in the use of TEM during the preparation of this paper. Publisher Copyright: © 2016 Published by Elsevier B.V. Copyright: Copyright 2018 Elsevier B.V., All rights reserved.

PY - 2016/5/15

Y1 - 2016/5/15

N2 - This paper reports a novel method for the synthesis of ZnO nanorods, nanowalls, and nanorod/wall structures directly on a substrate, using a simple chemical bath deposition process. The morphology of the resulting structures can be altered simply by adjusting the thickness of an Al thin film, which is used as a doping source. Transmission electron microscopy (TEM) and selected area electron diffraction (SAED) measurements revealed that the resulting ZnO formations possess a wurtzite structure. Inductively coupled plasma mass spectrometry (ICP-MS) revealed that the Al doping of the nanostructures is between 2.1 at% and 4.9 at%. The predominance of violet-blue emissions in the CL spectra of Al-doped and undoped ZnO indicates the presence of interstitial zinc (Zni) and zinc vacancies (VZn). In this study, the work function was adjusted between 3.81 and 4.39 eV simply by varying the thickness of the Al reaction source.

AB - This paper reports a novel method for the synthesis of ZnO nanorods, nanowalls, and nanorod/wall structures directly on a substrate, using a simple chemical bath deposition process. The morphology of the resulting structures can be altered simply by adjusting the thickness of an Al thin film, which is used as a doping source. Transmission electron microscopy (TEM) and selected area electron diffraction (SAED) measurements revealed that the resulting ZnO formations possess a wurtzite structure. Inductively coupled plasma mass spectrometry (ICP-MS) revealed that the Al doping of the nanostructures is between 2.1 at% and 4.9 at%. The predominance of violet-blue emissions in the CL spectra of Al-doped and undoped ZnO indicates the presence of interstitial zinc (Zni) and zinc vacancies (VZn). In this study, the work function was adjusted between 3.81 and 4.39 eV simply by varying the thickness of the Al reaction source.

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