Using co-sputtered ZrSiOx gate dielectrics to improve mobility and subthreshold swing of amorphous IGZO thin-film transistors

Chien Hsiung Hung, Shui Jinn Wang, Pang Yi Liu, Chien Hung Wu, Nai Sheng Wu, Hao Ping Yan, Tseng Hsing Lin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In recent years, amorphous indium-gallium-zinc-oxide (α-IGZO) thin-film transistors (TFTs) with much better performance compared with the low-temperature polysilicon (LTPS) counterpart have been demonstrated [1-2], nevertheless, continuous efforts are still urged to further polish its electrical properties for display application. To strengthen field effect and reduce gate leakage current, many research works have been focused on the feasibility of other alternative high-κ dielectric for α-IGZO TFTs [3]. In the present work, the use of co-sputtered zirconium silicon oxide (ZrSiOx) gate dielectrics to improve both mobility and subthreshold swing (SS) of α-IGZO TFT is proposed and demonstrated. The ZrSiOx dielectric is expected to have a good compromise between the field effect (κ-value) and gate leakage current, because silicon dioxide (SiO2) is with the widest bandgap and zirconium dioxide (ZrO2) could have a much better interface with α-IGZO in comparison with hafnium dioxide (HfO2) [4]. The suitable RF power ratio for the co-sputtering of ZrO2 and SiO2 targets at room temperature to maximize the role of ZrSiOx dielectrics is investigated. Immunity of poly-structure formation of the ZrSiOx dielectrics with RF power ratio (ZrO2:SiO2) > 2 found in experiments is examined. In addition, effect of post annealing after dielectric deposition (PA) on device performance are also studied.

Original languageEnglish
Title of host publication74th Annual Device Research Conference, DRC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509028276
DOIs
Publication statusPublished - 2016 Aug 22
Event74th Annual Device Research Conference, DRC 2016 - Newark, United States
Duration: 2016 Jun 192016 Jun 22

Publication series

NameDevice Research Conference - Conference Digest, DRC
Volume2016-August
ISSN (Print)1548-3770

Other

Other74th Annual Device Research Conference, DRC 2016
CountryUnited States
CityNewark
Period16-06-1916-06-22

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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    Hung, C. H., Wang, S. J., Liu, P. Y., Wu, C. H., Wu, N. S., Yan, H. P., & Lin, T. H. (2016). Using co-sputtered ZrSiOx gate dielectrics to improve mobility and subthreshold swing of amorphous IGZO thin-film transistors. In 74th Annual Device Research Conference, DRC 2016 [7548433] (Device Research Conference - Conference Digest, DRC; Vol. 2016-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2016.7548433