USJ formation using solid phase epitaxial regrowth and femtosencond laser anneal

Tzu Lang Shih, Sheng Wen Chen, Chang Peng Wu, Chung Wei Cheng, Chih Wei Chien, Wen-Shi Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

As device dimensions shrink, there is increasing need to raise dopants activation and reduce junction depth for source/drain (S/D) extension. In this experiment, solid phase epitaxial regrowth (SPER) and femtosecond laser annealing (FLA) were used to activate our samples. Femtosecond laser has advantages of ultra short laser pulses and low thermal budget. Due to the femtosecond laser pulses leading to nonlinear photon absorption[1], it enable nonlinear melting on silicon materials. In the letter, it shows lower sheet (Rs) resistance with abruptness dopant profile than conventional thermal anneal.

Original languageEnglish
Title of host publicationIon Implantation Technology 2012 - Proceedings of the 19th International Conference on Ion Implantation Technology
Pages129-130
Number of pages2
DOIs
Publication statusPublished - 2012 Dec 1
Event19th International Conference on Ion Implantation Technology 2012, IIT 2012 - Valladolid, Spain
Duration: 2012 Jun 252012 Jun 29

Publication series

NameAIP Conference Proceedings
Volume1496
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other19th International Conference on Ion Implantation Technology 2012, IIT 2012
CountrySpain
CityValladolid
Period12-06-2512-06-29

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'USJ formation using solid phase epitaxial regrowth and femtosencond laser anneal'. Together they form a unique fingerprint.

  • Cite this

    Shih, T. L., Chen, S. W., Wu, C. P., Cheng, C. W., Chien, C. W., & Lee, W-S. (2012). USJ formation using solid phase epitaxial regrowth and femtosencond laser anneal. In Ion Implantation Technology 2012 - Proceedings of the 19th International Conference on Ion Implantation Technology (pp. 129-130). (AIP Conference Proceedings; Vol. 1496). https://doi.org/10.1063/1.4766506