@inproceedings{84e760794e9648d190679f2f6b1b258e,
title = "USJ formation using solid phase epitaxial regrowth and femtosencond laser anneal",
abstract = "As device dimensions shrink, there is increasing need to raise dopants activation and reduce junction depth for source/drain (S/D) extension. In this experiment, solid phase epitaxial regrowth (SPER) and femtosecond laser annealing (FLA) were used to activate our samples. Femtosecond laser has advantages of ultra short laser pulses and low thermal budget. Due to the femtosecond laser pulses leading to nonlinear photon absorption[1], it enable nonlinear melting on silicon materials. In the letter, it shows lower sheet (Rs) resistance with abruptness dopant profile than conventional thermal anneal.",
author = "Shih, {Tzu Lang} and Chen, {Sheng Wen} and Wu, {Chang Peng} and Cheng, {Chung Wei} and Chien, {Chih Wei} and Lee, {Wen Hsi}",
year = "2012",
doi = "10.1063/1.4766506",
language = "English",
isbn = "9780735411098",
series = "AIP Conference Proceedings",
pages = "129--130",
booktitle = "Ion Implantation Technology 2012 - Proceedings of the 19th International Conference on Ion Implantation Technology",
note = "19th International Conference on Ion Implantation Technology 2012, IIT 2012 ; Conference date: 25-06-2012 Through 29-06-2012",
}