UV, blue, green, yellow-green and white LEDs fabricated by III-N semiconductors

Y. K. Su, Jinn-Kong Sheu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Recent achievements in GaN-based light-emitting diodes (LEDs), which is linked to the use of new designs, such as p+-AlGaN/GaN strained-layer superlattice (SLS) and n+-InGaN/GaN short-period superlattice (SPS) top contact layer is reported. GaN-based LEDs with low-operation voltages, which are as low as 3 V (at 20 mA ) even lower, can be achieved by the use of these heavy-doped layers. In addition, conventional transparent conductive oxide, such as indium tin oxide (ITO), can be served as a transparent top contact layer in GaN-based LEDs other than thin metal film such as Ni/Au. Luminescence intensity in visible GaN-based LEDs can be significantly improved by this new design due to the high-transparency top contact layer. In the recent achievements, white LEDs including a variety of designs, such as phosphor-containing and phosphor-less device structures, will also be reported. Specifically, the high-efficiency yellow-green (λ∼565 nm) LEDs based on InGaN/GaN MQW emitting layers, which the luminescence intensity is comparable with the conventional AlGaInP yellow-green (λ∼575 nm) LEDs is achieved. This high-efficiency InGaN/GaN yellow-green LED makes a single-chip complementary white LED possible.

Original languageEnglish
Title of host publicationProceedings of the 6th Chinese Optoelectronics Symposium, COES 2003
EditorsK. T. Chan, H. S. Kwok
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages3-6
Number of pages4
ISBN (Electronic)0780378873, 9780780378872
DOIs
Publication statusPublished - 2003 Jan 1
Event6th Chinese Optoelectronics Symposium, COES 2003 - Hong Kong, China
Duration: 2003 Sep 122003 Sep 14

Publication series

NameProceedings of the 6th Chinese Optoelectronics Symposium, COES 2003

Other

Other6th Chinese Optoelectronics Symposium, COES 2003
CountryChina
CityHong Kong
Period03-09-1203-09-14

Fingerprint

Light emitting diodes
Semiconductor materials
Phosphors
Luminescence
Tin oxides
Transparency
Indium
Oxides
Metals
Electric potential

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Su, Y. K., & Sheu, J-K. (2003). UV, blue, green, yellow-green and white LEDs fabricated by III-N semiconductors. In K. T. Chan, & H. S. Kwok (Eds.), Proceedings of the 6th Chinese Optoelectronics Symposium, COES 2003 (pp. 3-6). [1278151] (Proceedings of the 6th Chinese Optoelectronics Symposium, COES 2003). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/COS.2003.1278151
Su, Y. K. ; Sheu, Jinn-Kong. / UV, blue, green, yellow-green and white LEDs fabricated by III-N semiconductors. Proceedings of the 6th Chinese Optoelectronics Symposium, COES 2003. editor / K. T. Chan ; H. S. Kwok. Institute of Electrical and Electronics Engineers Inc., 2003. pp. 3-6 (Proceedings of the 6th Chinese Optoelectronics Symposium, COES 2003).
@inproceedings{27f3415044b44821a1c7db4aa2e450c7,
title = "UV, blue, green, yellow-green and white LEDs fabricated by III-N semiconductors",
abstract = "Recent achievements in GaN-based light-emitting diodes (LEDs), which is linked to the use of new designs, such as p+-AlGaN/GaN strained-layer superlattice (SLS) and n+-InGaN/GaN short-period superlattice (SPS) top contact layer is reported. GaN-based LEDs with low-operation voltages, which are as low as 3 V (at 20 mA ) even lower, can be achieved by the use of these heavy-doped layers. In addition, conventional transparent conductive oxide, such as indium tin oxide (ITO), can be served as a transparent top contact layer in GaN-based LEDs other than thin metal film such as Ni/Au. Luminescence intensity in visible GaN-based LEDs can be significantly improved by this new design due to the high-transparency top contact layer. In the recent achievements, white LEDs including a variety of designs, such as phosphor-containing and phosphor-less device structures, will also be reported. Specifically, the high-efficiency yellow-green (λ∼565 nm) LEDs based on InGaN/GaN MQW emitting layers, which the luminescence intensity is comparable with the conventional AlGaInP yellow-green (λ∼575 nm) LEDs is achieved. This high-efficiency InGaN/GaN yellow-green LED makes a single-chip complementary white LED possible.",
author = "Su, {Y. K.} and Jinn-Kong Sheu",
year = "2003",
month = "1",
day = "1",
doi = "10.1109/COS.2003.1278151",
language = "English",
series = "Proceedings of the 6th Chinese Optoelectronics Symposium, COES 2003",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "3--6",
editor = "Chan, {K. T.} and Kwok, {H. S.}",
booktitle = "Proceedings of the 6th Chinese Optoelectronics Symposium, COES 2003",
address = "United States",

}

Su, YK & Sheu, J-K 2003, UV, blue, green, yellow-green and white LEDs fabricated by III-N semiconductors. in KT Chan & HS Kwok (eds), Proceedings of the 6th Chinese Optoelectronics Symposium, COES 2003., 1278151, Proceedings of the 6th Chinese Optoelectronics Symposium, COES 2003, Institute of Electrical and Electronics Engineers Inc., pp. 3-6, 6th Chinese Optoelectronics Symposium, COES 2003, Hong Kong, China, 03-09-12. https://doi.org/10.1109/COS.2003.1278151

UV, blue, green, yellow-green and white LEDs fabricated by III-N semiconductors. / Su, Y. K.; Sheu, Jinn-Kong.

Proceedings of the 6th Chinese Optoelectronics Symposium, COES 2003. ed. / K. T. Chan; H. S. Kwok. Institute of Electrical and Electronics Engineers Inc., 2003. p. 3-6 1278151 (Proceedings of the 6th Chinese Optoelectronics Symposium, COES 2003).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - UV, blue, green, yellow-green and white LEDs fabricated by III-N semiconductors

AU - Su, Y. K.

AU - Sheu, Jinn-Kong

PY - 2003/1/1

Y1 - 2003/1/1

N2 - Recent achievements in GaN-based light-emitting diodes (LEDs), which is linked to the use of new designs, such as p+-AlGaN/GaN strained-layer superlattice (SLS) and n+-InGaN/GaN short-period superlattice (SPS) top contact layer is reported. GaN-based LEDs with low-operation voltages, which are as low as 3 V (at 20 mA ) even lower, can be achieved by the use of these heavy-doped layers. In addition, conventional transparent conductive oxide, such as indium tin oxide (ITO), can be served as a transparent top contact layer in GaN-based LEDs other than thin metal film such as Ni/Au. Luminescence intensity in visible GaN-based LEDs can be significantly improved by this new design due to the high-transparency top contact layer. In the recent achievements, white LEDs including a variety of designs, such as phosphor-containing and phosphor-less device structures, will also be reported. Specifically, the high-efficiency yellow-green (λ∼565 nm) LEDs based on InGaN/GaN MQW emitting layers, which the luminescence intensity is comparable with the conventional AlGaInP yellow-green (λ∼575 nm) LEDs is achieved. This high-efficiency InGaN/GaN yellow-green LED makes a single-chip complementary white LED possible.

AB - Recent achievements in GaN-based light-emitting diodes (LEDs), which is linked to the use of new designs, such as p+-AlGaN/GaN strained-layer superlattice (SLS) and n+-InGaN/GaN short-period superlattice (SPS) top contact layer is reported. GaN-based LEDs with low-operation voltages, which are as low as 3 V (at 20 mA ) even lower, can be achieved by the use of these heavy-doped layers. In addition, conventional transparent conductive oxide, such as indium tin oxide (ITO), can be served as a transparent top contact layer in GaN-based LEDs other than thin metal film such as Ni/Au. Luminescence intensity in visible GaN-based LEDs can be significantly improved by this new design due to the high-transparency top contact layer. In the recent achievements, white LEDs including a variety of designs, such as phosphor-containing and phosphor-less device structures, will also be reported. Specifically, the high-efficiency yellow-green (λ∼565 nm) LEDs based on InGaN/GaN MQW emitting layers, which the luminescence intensity is comparable with the conventional AlGaInP yellow-green (λ∼575 nm) LEDs is achieved. This high-efficiency InGaN/GaN yellow-green LED makes a single-chip complementary white LED possible.

UR - http://www.scopus.com/inward/record.url?scp=84945547303&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84945547303&partnerID=8YFLogxK

U2 - 10.1109/COS.2003.1278151

DO - 10.1109/COS.2003.1278151

M3 - Conference contribution

T3 - Proceedings of the 6th Chinese Optoelectronics Symposium, COES 2003

SP - 3

EP - 6

BT - Proceedings of the 6th Chinese Optoelectronics Symposium, COES 2003

A2 - Chan, K. T.

A2 - Kwok, H. S.

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Su YK, Sheu J-K. UV, blue, green, yellow-green and white LEDs fabricated by III-N semiconductors. In Chan KT, Kwok HS, editors, Proceedings of the 6th Chinese Optoelectronics Symposium, COES 2003. Institute of Electrical and Electronics Engineers Inc. 2003. p. 3-6. 1278151. (Proceedings of the 6th Chinese Optoelectronics Symposium, COES 2003). https://doi.org/10.1109/COS.2003.1278151