UV-C Light Detection in Aluminum Gallium Oxide Metal–Semiconductor–Metal Photodetectors

In this work, we fabricated aluminum gallium oxide (AGO) metal–semiconductor–metal photodetectors (PDs) with different RF powers of Ga2O3 target (P_Ga), and their characteristics were investigated and discussed. At _PGa below 160 W, the PDs exhibited high resistance across the whole range of wavelengths. When P_Ga increases to 160 W or higher, both the response and rejection ratio improve significantly. The optimal photoresponse occurs when the DC power of Al is 80 W and P_Ga is 180 W, with the rejection ratio about 10⁵, the responsivity 0.2 mA/W, the rise time less than 1 s, and the decay time less than 0.1 s. Additionally, the optimal AGO PDs have high stability and repeatability demonstrated in the time-resolved response.