UV enhanced emission performance of low temperature grown Ga-doped ZnO nanorods

Shoou Jinn Chang, Bi Gui Duan, Chih Hung Hsiao, Chung Wei Liu, Sheng Joue Young

Research output: Contribution to journalArticlepeer-review

25 Citations (Scopus)


We report on hydrothermal growth and gallium doping of ZnO (GZO) nanorods for field emitters. The GZO nanorods grown at 90 °C were structurally uniform and well oriented with pure wurtzite structure. It was also found that turn-on fields were 5.4 and 3.6 V/μm while field-enhancement factors β were 1711 and 9058, for the ZnO nanorods and GZO nanorods grown at 90 °C, respectively. In addition, the turn-on electrical field was reduced from 3.6 to 3.15 V/μm and β of GZO nanorods was enhanced from 9058 to 13529 by UV illumination.

Original languageEnglish
Article number6657695
Pages (from-to)66-69
Number of pages4
JournalIEEE Photonics Technology Letters
Issue number1
Publication statusPublished - 2014 Jan 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


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