We report on hydrothermal growth and gallium doping of ZnO (GZO) nanorods for field emitters. The GZO nanorods grown at 90 °C were structurally uniform and well oriented with pure wurtzite structure. It was also found that turn-on fields were 5.4 and 3.6 V/μm while field-enhancement factors β were 1711 and 9058, for the ZnO nanorods and GZO nanorods grown at 90 °C, respectively. In addition, the turn-on electrical field was reduced from 3.6 to 3.15 V/μm and β of GZO nanorods was enhanced from 9058 to 13529 by UV illumination.
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Atomic and Molecular Physics, and Optics
- Electronic, Optical and Magnetic Materials