UV enhanced field emission for β-Ga2O3 nanowires

Y. L. Wu, Shoou Jinn Chang, C. H. Liu, Wen Yin Weng, Tsung Ying Tsai, Cheng Liang Hsu

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6 Citations (Scopus)

Abstract

This letter presents vapor-liquid-solid growth of β-Ga 2O3 nanowires (NWs) on cost-effective SiO2Si template and the fabrication of β-Ga2O3 NW field emitters. It is found that the β-Ga2O3 NWs grown at 950°C are structurally uniform, defect free, and well-oriented with pure monoclinic structure. It is also found that turnon fields are 2.0, 3.9, and 5.8 Vμ m whereas field-enhancement factors β are 1890, 2760, and 4489, for the samples grown at 850° C, 900° C, and 950°C, respectively. For the sample prepared at 950° C, it is found that we could further reduce the turnon field from 2 to 1.2 Vμ m whereas enhance the field-enhancement factor β from 4489 to 6926 by ultraviolet irradiation.

Original languageEnglish
Article number6502192
Pages (from-to)701-703
Number of pages3
JournalIEEE Electron Device Letters
Volume34
Issue number5
DOIs
Publication statusPublished - 2013 May 7

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Wu, Y. L., Chang, S. J., Liu, C. H., Weng, W. Y., Tsai, T. Y., & Hsu, C. L. (2013). UV enhanced field emission for β-Ga2O3 nanowires. IEEE Electron Device Letters, 34(5), 701-703. [6502192]. https://doi.org/10.1109/LED.2013.2254105