This letter presents vapor-liquid-solid growth of β-Ga 2O3 nanowires (NWs) on cost-effective SiO2Si template and the fabrication of β-Ga2O3 NW field emitters. It is found that the β-Ga2O3 NWs grown at 950°C are structurally uniform, defect free, and well-oriented with pure monoclinic structure. It is also found that turnon fields are 2.0, 3.9, and 5.8 Vμ m whereas field-enhancement factors β are 1890, 2760, and 4489, for the samples grown at 850° C, 900° C, and 950°C, respectively. For the sample prepared at 950° C, it is found that we could further reduce the turnon field from 2 to 1.2 Vμ m whereas enhance the field-enhancement factor β from 4489 to 6926 by ultraviolet irradiation.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering