UV enhanced field emission performance of Mg-doped ZnO nanorods

Y. H. Liu, Sheng Joue Young, L. W. Ji, T. H. Meen, C. H. Hsiao, C. S. Huang, Shoou-Jinn Chang

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

Vertical Mg-ZnO nanorods were synthesized on glass substrates using a low-temperature hydrothermal method. The field emission performance of Mg-ZnO nanorods was greatly enhanced by UV light illumination. It was found that the Mg-ZnO nanorods grown at 80 °C were structurally uniform and well oriented with pure wurtzite structure. Mg-ZnO nanorod exhibited turn-on fields was 2.27 V/μm, and field enhancement factors (β) was 2212. UV illumination of the Mg-ZnO nanorod reduced the turn-on electrical field from 2.27 to 1.97 V\μm and enhanced the β from 2212 and 4136.

Original languageEnglish
Article number6784417
Pages (from-to)1541-1545
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume61
Issue number5
DOIs
Publication statusPublished - 2014 Jan 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'UV enhanced field emission performance of Mg-doped ZnO nanorods'. Together they form a unique fingerprint.

  • Cite this

    Liu, Y. H., Young, S. J., Ji, L. W., Meen, T. H., Hsiao, C. H., Huang, C. S., & Chang, S-J. (2014). UV enhanced field emission performance of Mg-doped ZnO nanorods. IEEE Transactions on Electron Devices, 61(5), 1541-1545. [6784417]. https://doi.org/10.1109/TED.2014.2312853