High-density gallium (Ga)-doped ZnO nanosheets were fabricated successfully on a glass substrate by aqueous solution method. The diameter and length of the Ga-doped ZnO nanosheets were ∼ 25 nm and 2.16 μ m , respectively. In the dark, the turn-ON field of Ga-doped ZnO nanosheets was 4.67 Vμ m , and the field enhancement factor (β) was 4037. Under UV illumination, the turn-ON field and field enhancement factor were 2.83 Vμ m and 6616, respectively.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering