UV enhanced field emission properties of Ga-doped ZnO nanosheets

Yi Hsing Liu, Sheng Joue Young, Liang Wen Ji, Shoou Jinn Chang

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

High-density gallium (Ga)-doped ZnO nanosheets were fabricated successfully on a glass substrate by aqueous solution method. The diameter and length of the Ga-doped ZnO nanosheets were ∼ 25 nm and 2.16 μ m , respectively. In the dark, the turn-ON field of Ga-doped ZnO nanosheets was 4.67 Vμ m , and the field enhancement factor (β) was 4037. Under UV illumination, the turn-ON field and field enhancement factor were 2.83 Vμ m and 6616, respectively.

Original languageEnglish
Article number7086027
Pages (from-to)2033-2037
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume62
Issue number6
DOIs
Publication statusPublished - 2015 Jun 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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