Uv enhanced indium-doped ZnO nanorod field emitter

Shoou Jinn Chang; Bi Gui Duan; Chung Wei Liu; Chih Hung Hsiao; Sheng Joue Young; Chien Sheng Huang

doi:10.1109/TED.2013.2280910

Uv enhanced indium-doped ZnO nanorod field emitter

Shoou Jinn Chang, Bi Gui Duan, Chung Wei Liu, Chih Hung Hsiao, Sheng Joue Young, Chien Sheng Huang

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

In this paper, pure and indium-doped ZnO nanorods were prepared by the hydrothermal method. Their morphology and structure were characterized by field emission scanning electron microscopy, high-resolution transmission electron microscope, X-ray diffraction, and photoluminescence spectroscopy, which demonstrated the structure and crystalline quality of the In-doped ZnO nanorods. Doping with indium reduced turn-on field from 5.8 to 0.8 V m um. The field enhancement factors, β, of the pure and indium-doped ZnO naonrods, estimated from the slopes of the Fowler-Nordhein plot were around 923 and 9818.

Original language	English
Article number	6619440
Pages (from-to)	3901-3906
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	60
Issue number	11
DOIs	https://doi.org/10.1109/TED.2013.2280910
Publication status	Published - 2013

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2013.2280910

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title = "Uv enhanced indium-doped ZnO nanorod field emitter",

abstract = "In this paper, pure and indium-doped ZnO nanorods were prepared by the hydrothermal method. Their morphology and structure were characterized by field emission scanning electron microscopy, high-resolution transmission electron microscope, X-ray diffraction, and photoluminescence spectroscopy, which demonstrated the structure and crystalline quality of the In-doped ZnO nanorods. Doping with indium reduced turn-on field from 5.8 to 0.8 V m um. The field enhancement factors, β, of the pure and indium-doped ZnO naonrods, estimated from the slopes of the Fowler-Nordhein plot were around 923 and 9818.",

author = "Chang, {Shoou Jinn} and Duan, {Bi Gui} and Liu, {Chung Wei} and Hsiao, {Chih Hung} and Young, {Sheng Joue} and Huang, {Chien Sheng}",

year = "2013",

doi = "10.1109/TED.2013.2280910",

language = "English",

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T1 - Uv enhanced indium-doped ZnO nanorod field emitter

AU - Chang, Shoou Jinn

AU - Duan, Bi Gui

AU - Liu, Chung Wei

AU - Hsiao, Chih Hung

AU - Young, Sheng Joue

AU - Huang, Chien Sheng

PY - 2013

Y1 - 2013

N2 - In this paper, pure and indium-doped ZnO nanorods were prepared by the hydrothermal method. Their morphology and structure were characterized by field emission scanning electron microscopy, high-resolution transmission electron microscope, X-ray diffraction, and photoluminescence spectroscopy, which demonstrated the structure and crystalline quality of the In-doped ZnO nanorods. Doping with indium reduced turn-on field from 5.8 to 0.8 V m um. The field enhancement factors, β, of the pure and indium-doped ZnO naonrods, estimated from the slopes of the Fowler-Nordhein plot were around 923 and 9818.

AB - In this paper, pure and indium-doped ZnO nanorods were prepared by the hydrothermal method. Their morphology and structure were characterized by field emission scanning electron microscopy, high-resolution transmission electron microscope, X-ray diffraction, and photoluminescence spectroscopy, which demonstrated the structure and crystalline quality of the In-doped ZnO nanorods. Doping with indium reduced turn-on field from 5.8 to 0.8 V m um. The field enhancement factors, β, of the pure and indium-doped ZnO naonrods, estimated from the slopes of the Fowler-Nordhein plot were around 923 and 9818.

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

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ER -

Uv enhanced indium-doped ZnO nanorod field emitter

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