Uv enhanced indium-doped ZnO nanorod field emitter

Shoou Jinn Chang, Bi Gui Duan, Chung Wei Liu, Chih Hung Hsiao, Sheng Joue Young, Chien Sheng Huang

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


In this paper, pure and indium-doped ZnO nanorods were prepared by the hydrothermal method. Their morphology and structure were characterized by field emission scanning electron microscopy, high-resolution transmission electron microscope, X-ray diffraction, and photoluminescence spectroscopy, which demonstrated the structure and crystalline quality of the In-doped ZnO nanorods. Doping with indium reduced turn-on field from 5.8 to 0.8 V m um. The field enhancement factors, β, of the pure and indium-doped ZnO naonrods, estimated from the slopes of the Fowler-Nordhein plot were around 923 and 9818.

Original languageEnglish
Article number6619440
Pages (from-to)3901-3906
Number of pages6
JournalIEEE Transactions on Electron Devices
Issue number11
Publication statusPublished - 2013

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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