UV induced zener diode characteristic in a single n-ZnO/p ++-Si nanoheterojunction

Sarkar Pal, S. Dhara, J. J. Wu, C. S. Sundar, P. Magudapathy, K. G.M. Nair

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Rectification is observed in a single n-ZnO/p ++-Si nanoheterojunction using ultra high vacuum compatible scanning tunneling microscope. The nanohetrojunctions have been grown using catalyst free vapor-solid growth of ZnO nanorods on p ++-Si substarte. A high rectification ratio ∼100 at 2 V is observed in the current voltage measurements. Temperature dependent study in these nanoheterojunctions showed activation energy for carrier conduction ∼66 meV, which is primarily associated to the presence of heterojunction induced interface states. Role of ultra violet excitation on these finite sized (∼500 nm) nanoheterojunction is also studied with photo-generated electron-hole pairs. A Zener breakdown is observed in this photo-excitation process. Increase in the concentration of minority carriers and corresponding decrease in barrier width and height at the junction have been identified for the observed tunneling behavior under UV illumination. The large carrier concentration in the finite sized device with large diffusion length of electron (∼2 μm) is made responsible for the observed voltage regulation.

Original languageEnglish
Pages (from-to)3879-3883
Number of pages5
JournalJournal of Nanoscience and Nanotechnology
Volume12
Issue number5
DOIs
Publication statusPublished - 2012 Jul 23

Fingerprint

Zener diodes
avalanche diodes
rectification
Zener effect
Electrons
Nanotubes
Photoexcitation
Interface states
Voltage measurement
Ultrahigh vacuum
Electric current measurement
Vacuum
diffusion length
minority carriers
Lighting
Nanorods
photoexcitation
Voltage control
electrical measurement
ultrahigh vacuum

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Pal, Sarkar ; Dhara, S. ; Wu, J. J. ; Sundar, C. S. ; Magudapathy, P. ; Nair, K. G.M. / UV induced zener diode characteristic in a single n-ZnO/p ++-Si nanoheterojunction. In: Journal of Nanoscience and Nanotechnology. 2012 ; Vol. 12, No. 5. pp. 3879-3883.
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UV induced zener diode characteristic in a single n-ZnO/p ++-Si nanoheterojunction. / Pal, Sarkar; Dhara, S.; Wu, J. J.; Sundar, C. S.; Magudapathy, P.; Nair, K. G.M.

In: Journal of Nanoscience and Nanotechnology, Vol. 12, No. 5, 23.07.2012, p. 3879-3883.

Research output: Contribution to journalArticle

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