UV-ozone process for film densification of solution-processed InGaZnO thin-film transistors

Bo Yuan Su; An Hsiu Cheng; Jia Ling Wu; Chun Cheng Lin; Jian Fu Tang; Sheng Yuan Chu; Yung Der Juang

doi:10.1109/JDT.2014.2354364

UV-ozone process for film densification of solution-processed InGaZnO thin-film transistors

Bo Yuan Su
, An Hsiu Cheng
, Jia Ling Wu
, Chun Cheng Lin
, Jian Fu Tang
, Sheng Yuan Chu
, Yung Der Juang

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

The effects of ultraviolet (UV)-ozone treatment on solution-processed amorphous InGaZnO (IGZO) thin-film transistors (TFTs) grown using the sol-gel method are investigated. The UV-ozone-treated TFT devices showed an improved field-effect mobility of 1.52 cm² · V^-1 · s^-1 and a subthreshold slope (S) of 0.42 V/dec compared to those of IGZO TFT devices with only thermal annealing (0.75 cm² · V^-1 · s^-1 and 0.84 V/dec, respectively). The enhancement of the UV-ozone-treated TFTs is mostly attributed to the increased film packing density, higher Al S/D electrodes adhesion properties, reduced oxygen-related defects, and less electron trapping of the IGZO thin films, which improved the TFT performance and bias stress stability.

Original language	English
Article number	6891100
Pages (from-to)	6-12
Number of pages	7
Journal	IEEE/OSA Journal of Display Technology
Volume	11
Issue number	1
DOIs	https://doi.org/10.1109/JDT.2014.2354364
Publication status	Published - 2015 Jan 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/JDT.2014.2354364

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title = "UV-ozone process for film densification of solution-processed InGaZnO thin-film transistors",

abstract = "The effects of ultraviolet (UV)-ozone treatment on solution-processed amorphous InGaZnO (IGZO) thin-film transistors (TFTs) grown using the sol-gel method are investigated. The UV-ozone-treated TFT devices showed an improved field-effect mobility of 1.52 cm2 · V-1 · s-1 and a subthreshold slope (S) of 0.42 V/dec compared to those of IGZO TFT devices with only thermal annealing (0.75 cm2 · V-1 · s-1 and 0.84 V/dec, respectively). The enhancement of the UV-ozone-treated TFTs is mostly attributed to the increased film packing density, higher Al S/D electrodes adhesion properties, reduced oxygen-related defects, and less electron trapping of the IGZO thin films, which improved the TFT performance and bias stress stability.",

author = "Su, \{Bo Yuan\} and Cheng, \{An Hsiu\} and Wu, \{Jia Ling\} and Lin, \{Chun Cheng\} and Tang, \{Jian Fu\} and Chu, \{Sheng Yuan\} and Juang, \{Yung Der\}",

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doi = "10.1109/JDT.2014.2354364",

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T1 - UV-ozone process for film densification of solution-processed InGaZnO thin-film transistors

AU - Su, Bo Yuan

AU - Cheng, An Hsiu

AU - Wu, Jia Ling

AU - Lin, Chun Cheng

AU - Tang, Jian Fu

AU - Chu, Sheng Yuan

AU - Juang, Yung Der

PY - 2015/1/1

Y1 - 2015/1/1

N2 - The effects of ultraviolet (UV)-ozone treatment on solution-processed amorphous InGaZnO (IGZO) thin-film transistors (TFTs) grown using the sol-gel method are investigated. The UV-ozone-treated TFT devices showed an improved field-effect mobility of 1.52 cm2 · V-1 · s-1 and a subthreshold slope (S) of 0.42 V/dec compared to those of IGZO TFT devices with only thermal annealing (0.75 cm2 · V-1 · s-1 and 0.84 V/dec, respectively). The enhancement of the UV-ozone-treated TFTs is mostly attributed to the increased film packing density, higher Al S/D electrodes adhesion properties, reduced oxygen-related defects, and less electron trapping of the IGZO thin films, which improved the TFT performance and bias stress stability.

AB - The effects of ultraviolet (UV)-ozone treatment on solution-processed amorphous InGaZnO (IGZO) thin-film transistors (TFTs) grown using the sol-gel method are investigated. The UV-ozone-treated TFT devices showed an improved field-effect mobility of 1.52 cm2 · V-1 · s-1 and a subthreshold slope (S) of 0.42 V/dec compared to those of IGZO TFT devices with only thermal annealing (0.75 cm2 · V-1 · s-1 and 0.84 V/dec, respectively). The enhancement of the UV-ozone-treated TFTs is mostly attributed to the increased film packing density, higher Al S/D electrodes adhesion properties, reduced oxygen-related defects, and less electron trapping of the IGZO thin films, which improved the TFT performance and bias stress stability.

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UV-ozone process for film densification of solution-processed InGaZnO thin-film transistors

Abstract

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