UV-ozone-treated ultra-thin Al2O3-Doped ZnO film as anode buffer layer on organic light emitting diodes

Hsin Wei Lu, Po Ching Kao, Sheng Yuan Chu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, the UV-ozone treated 2 wt% Al2O3-doped ZnO layers for 1 nm as anode buffer layer were prepared by thermal evaporation. The current density enhanced from 235 to 355 mA/cm2, luminance enhanced from 7588 to 13470 cd/m2, and efficiency enhanced from 3.2 to 3.8 cd/A.

Original languageEnglish
Title of host publication23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
PublisherSociety for Information Display
Pages1259-1260
Number of pages2
ISBN (Electronic)9781510845510
Publication statusPublished - 2016 Jan 1
Event23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016 - Fukuoka, Japan
Duration: 2016 Dec 72016 Dec 9

Publication series

Name23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
Volume2

Other

Other23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
CountryJapan
CityFukuoka
Period16-12-0716-12-09

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Human-Computer Interaction
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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