V-band high-isolation CMOS T/R switch fabricated using 90-nm CMOS technology

Chi Shin Kuo, Hsin Chih Kuo, Huey-Ru Chuang, Chu Yu Chen, Tzuen-Hsi Huang, Guo Wei Huang

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

This article presents a V-band high-isolation complementary metal-oxide semiconductor (CMOS) single-pole double-throw transmitter/receiver (T/R) switch fabricated with TSMC standard 90-nm 1P9M CMOS technology. A low insertion loss and high linearity are achieved using the body-floating technique. In addition, the leakage cancellation technique is used to increase the isolation between the transmitter and receiver ports. The measured results show the insertion loss from the transmitter port to the antenna port is less than 3.5 dB, and the isolation between the transmitter and receiver ports is higher than 28 dB from 57 to 64 GHz. At the center frequency of 60 GHz, the port isolation is higher than 34 dB. The switch isolation has also been measured under the large signal test which is not reported in the previous works.

Original languageEnglish
Pages (from-to)1118-1123
Number of pages6
JournalMicrowave and Optical Technology Letters
Volume54
Issue number5
DOIs
Publication statusPublished - 2012 May 1

Fingerprint

transmitter receivers
extremely high frequencies
Transceivers
Transmitters
isolation
CMOS
switches
Metals
Switches
Insertion losses
transmitters
insertion loss
receivers
Poles
Antennas
cancellation
floating
linearity
leakage
poles

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Kuo, Chi Shin ; Kuo, Hsin Chih ; Chuang, Huey-Ru ; Chen, Chu Yu ; Huang, Tzuen-Hsi ; Huang, Guo Wei. / V-band high-isolation CMOS T/R switch fabricated using 90-nm CMOS technology. In: Microwave and Optical Technology Letters. 2012 ; Vol. 54, No. 5. pp. 1118-1123.
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V-band high-isolation CMOS T/R switch fabricated using 90-nm CMOS technology. / Kuo, Chi Shin; Kuo, Hsin Chih; Chuang, Huey-Ru; Chen, Chu Yu; Huang, Tzuen-Hsi; Huang, Guo Wei.

In: Microwave and Optical Technology Letters, Vol. 54, No. 5, 01.05.2012, p. 1118-1123.

Research output: Contribution to journalArticle

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AU - Kuo, Chi Shin

AU - Kuo, Hsin Chih

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AB - This article presents a V-band high-isolation complementary metal-oxide semiconductor (CMOS) single-pole double-throw transmitter/receiver (T/R) switch fabricated with TSMC standard 90-nm 1P9M CMOS technology. A low insertion loss and high linearity are achieved using the body-floating technique. In addition, the leakage cancellation technique is used to increase the isolation between the transmitter and receiver ports. The measured results show the insertion loss from the transmitter port to the antenna port is less than 3.5 dB, and the isolation between the transmitter and receiver ports is higher than 28 dB from 57 to 64 GHz. At the center frequency of 60 GHz, the port isolation is higher than 34 dB. The switch isolation has also been measured under the large signal test which is not reported in the previous works.

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