Valence band offset of wurtzite InN/AIN heterojunction determined by photoelectron spectroscopy

C. L. Wu; C. H. Shen; S. Gwo

doi:10.1063/1.2165195

Valence band offset of wurtzite InN/AIN heterojunction determined by photoelectron spectroscopy

C. L. Wu, C. H. Shen, S. Gwo

Department of Physics

Research output: Contribution to journal › Article › peer-review

49 Citations (Scopus)

Abstract

The valence band offset (VBO) at the wurtzite-type, nitrogen-polarity InNAlN (000 1-) heterojunction has been determined by photoelectron spectroscopy to be 3.10±0.04 eV. The heterojunction samples used for this study have an atomically abrupt 8:9 commensurate interface, at which every eight-unit cell of InN aligns exactly with every nine-unit cell of AlN. The commensurately matched InNAlN heterojunction system grown on Si(111) is particularly suitable for the determination of VBO since both InN and AlN epitaxial layers are completely relaxed and the strain-induced piezoelectric fields, which are difficult to be quantitatively determined, have a negligible effect.

Original language	English
Article number	032105
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	88
Issue number	3
DOIs	https://doi.org/10.1063/1.2165195
Publication status	Published - 2006

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2165195

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title = "Valence band offset of wurtzite InN/AIN heterojunction determined by photoelectron spectroscopy",

abstract = "The valence band offset (VBO) at the wurtzite-type, nitrogen-polarity InNAlN (000 1-) heterojunction has been determined by photoelectron spectroscopy to be 3.10±0.04 eV. The heterojunction samples used for this study have an atomically abrupt 8:9 commensurate interface, at which every eight-unit cell of InN aligns exactly with every nine-unit cell of AlN. The commensurately matched InNAlN heterojunction system grown on Si(111) is particularly suitable for the determination of VBO since both InN and AlN epitaxial layers are completely relaxed and the strain-induced piezoelectric fields, which are difficult to be quantitatively determined, have a negligible effect.",

author = "Wu, {C. L.} and Shen, {C. H.} and S. Gwo",

note = "Funding Information: This work was supported in part by the National Science Council of Taiwan (Grant Nos. NSC-94-2112-M-007-028 and NSC-94-2112-M-002-048). The authors gratefully acknowledge Dr. Tun-Wen Pi at NSRRC for useful discussions and support. ",

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T1 - Valence band offset of wurtzite InN/AIN heterojunction determined by photoelectron spectroscopy

AU - Wu, C. L.

AU - Shen, C. H.

AU - Gwo, S.

N1 - Funding Information: This work was supported in part by the National Science Council of Taiwan (Grant Nos. NSC-94-2112-M-007-028 and NSC-94-2112-M-002-048). The authors gratefully acknowledge Dr. Tun-Wen Pi at NSRRC for useful discussions and support.

PY - 2006

Y1 - 2006

N2 - The valence band offset (VBO) at the wurtzite-type, nitrogen-polarity InNAlN (000 1-) heterojunction has been determined by photoelectron spectroscopy to be 3.10±0.04 eV. The heterojunction samples used for this study have an atomically abrupt 8:9 commensurate interface, at which every eight-unit cell of InN aligns exactly with every nine-unit cell of AlN. The commensurately matched InNAlN heterojunction system grown on Si(111) is particularly suitable for the determination of VBO since both InN and AlN epitaxial layers are completely relaxed and the strain-induced piezoelectric fields, which are difficult to be quantitatively determined, have a negligible effect.

AB - The valence band offset (VBO) at the wurtzite-type, nitrogen-polarity InNAlN (000 1-) heterojunction has been determined by photoelectron spectroscopy to be 3.10±0.04 eV. The heterojunction samples used for this study have an atomically abrupt 8:9 commensurate interface, at which every eight-unit cell of InN aligns exactly with every nine-unit cell of AlN. The commensurately matched InNAlN heterojunction system grown on Si(111) is particularly suitable for the determination of VBO since both InN and AlN epitaxial layers are completely relaxed and the strain-induced piezoelectric fields, which are difficult to be quantitatively determined, have a negligible effect.

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Valence band offset of wurtzite InN/AIN heterojunction determined by photoelectron spectroscopy

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