Valence-band splitting in InGaPN: Effects of epitaxial strain and atomic ordering

K. I. Lin, T. S. Wang, Yan-Ten Lu, J. S. Hwang

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Both the epitaxial-strain and atomic-ordering effects in In 0.54Ga0.46P1-y,Ny/GaAs (y = 0%-2.0%) heterostructures are characterized by high-re solution x-ray rocking curve measurements and photoreflectance (PR) spectra at various temperatures. The lattice constant of InGaPN follows a bowing effect instead of Vegard's law. The valence-band splitting (VBS) and spin-orbit splitting of InGaPN are obtained from PR spectra. As the nitrogen concentration increases, the lattice mismatch (the compressive strain) between the epilayer and GaAs substrate decreases while the VBS increases, which implies an increase in the degree of ordering of InGaPN. In addition, the order parameter η of InGaPN is deduced from the VBS.

Original languageEnglish
Article number056103
JournalJournal of Applied Physics
Volume99
Issue number5
DOIs
Publication statusPublished - 2006 Mar 1

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valence
orbits
nitrogen
curves
x rays
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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abstract = "Both the epitaxial-strain and atomic-ordering effects in In 0.54Ga0.46P1-y,Ny/GaAs (y = 0{\%}-2.0{\%}) heterostructures are characterized by high-re solution x-ray rocking curve measurements and photoreflectance (PR) spectra at various temperatures. The lattice constant of InGaPN follows a bowing effect instead of Vegard's law. The valence-band splitting (VBS) and spin-orbit splitting of InGaPN are obtained from PR spectra. As the nitrogen concentration increases, the lattice mismatch (the compressive strain) between the epilayer and GaAs substrate decreases while the VBS increases, which implies an increase in the degree of ordering of InGaPN. In addition, the order parameter η of InGaPN is deduced from the VBS.",
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Valence-band splitting in InGaPN : Effects of epitaxial strain and atomic ordering. / Lin, K. I.; Wang, T. S.; Lu, Yan-Ten; Hwang, J. S.

In: Journal of Applied Physics, Vol. 99, No. 5, 056103, 01.03.2006.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Valence-band splitting in InGaPN

T2 - Effects of epitaxial strain and atomic ordering

AU - Lin, K. I.

AU - Wang, T. S.

AU - Lu, Yan-Ten

AU - Hwang, J. S.

PY - 2006/3/1

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AB - Both the epitaxial-strain and atomic-ordering effects in In 0.54Ga0.46P1-y,Ny/GaAs (y = 0%-2.0%) heterostructures are characterized by high-re solution x-ray rocking curve measurements and photoreflectance (PR) spectra at various temperatures. The lattice constant of InGaPN follows a bowing effect instead of Vegard's law. The valence-band splitting (VBS) and spin-orbit splitting of InGaPN are obtained from PR spectra. As the nitrogen concentration increases, the lattice mismatch (the compressive strain) between the epilayer and GaAs substrate decreases while the VBS increases, which implies an increase in the degree of ordering of InGaPN. In addition, the order parameter η of InGaPN is deduced from the VBS.

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