Valence-band splitting in InGaPN: Effects of epitaxial strain and atomic ordering

K. I. Lin; T. S. Wang; Y. T. Lu; J. S. Hwang

doi:10.1063/1.2176182

Valence-band splitting in InGaPN: Effects of epitaxial strain and atomic ordering

K. I. Lin, T. S. Wang, Y. T. Lu, J. S. Hwang

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Both the epitaxial-strain and atomic-ordering effects in In _0.54Ga_0.46P_1-y,N_y/GaAs (y = 0%-2.0%) heterostructures are characterized by high-re solution x-ray rocking curve measurements and photoreflectance (PR) spectra at various temperatures. The lattice constant of InGaPN follows a bowing effect instead of Vegard's law. The valence-band splitting (VBS) and spin-orbit splitting of InGaPN are obtained from PR spectra. As the nitrogen concentration increases, the lattice mismatch (the compressive strain) between the epilayer and GaAs substrate decreases while the VBS increases, which implies an increase in the degree of ordering of InGaPN. In addition, the order parameter η of InGaPN is deduced from the VBS.

Original language	English
Article number	056103
Journal	Journal of Applied Physics
Volume	99
Issue number	5
DOIs	https://doi.org/10.1063/1.2176182
Publication status	Published - 2006 Mar 1

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

Access to Document

10.1063/1.2176182

Cite this

@article{d750b62e30fa46d3aeb516c9664b9e90,

title = "Valence-band splitting in InGaPN: Effects of epitaxial strain and atomic ordering",

abstract = "Both the epitaxial-strain and atomic-ordering effects in In 0.54Ga0.46P1-y,Ny/GaAs (y = 0%-2.0%) heterostructures are characterized by high-re solution x-ray rocking curve measurements and photoreflectance (PR) spectra at various temperatures. The lattice constant of InGaPN follows a bowing effect instead of Vegard's law. The valence-band splitting (VBS) and spin-orbit splitting of InGaPN are obtained from PR spectra. As the nitrogen concentration increases, the lattice mismatch (the compressive strain) between the epilayer and GaAs substrate decreases while the VBS increases, which implies an increase in the degree of ordering of InGaPN. In addition, the order parameter η of InGaPN is deduced from the VBS.",

author = "Lin, {K. I.} and Wang, {T. S.} and Lu, {Y. T.} and Hwang, {J. S.}",

year = "2006",

month = mar,

day = "1",

doi = "10.1063/1.2176182",

language = "English",

volume = "99",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "5",

}

TY - JOUR

T1 - Valence-band splitting in InGaPN

T2 - Effects of epitaxial strain and atomic ordering

AU - Lin, K. I.

AU - Wang, T. S.

AU - Lu, Y. T.

AU - Hwang, J. S.

PY - 2006/3/1

Y1 - 2006/3/1

N2 - Both the epitaxial-strain and atomic-ordering effects in In 0.54Ga0.46P1-y,Ny/GaAs (y = 0%-2.0%) heterostructures are characterized by high-re solution x-ray rocking curve measurements and photoreflectance (PR) spectra at various temperatures. The lattice constant of InGaPN follows a bowing effect instead of Vegard's law. The valence-band splitting (VBS) and spin-orbit splitting of InGaPN are obtained from PR spectra. As the nitrogen concentration increases, the lattice mismatch (the compressive strain) between the epilayer and GaAs substrate decreases while the VBS increases, which implies an increase in the degree of ordering of InGaPN. In addition, the order parameter η of InGaPN is deduced from the VBS.

AB - Both the epitaxial-strain and atomic-ordering effects in In 0.54Ga0.46P1-y,Ny/GaAs (y = 0%-2.0%) heterostructures are characterized by high-re solution x-ray rocking curve measurements and photoreflectance (PR) spectra at various temperatures. The lattice constant of InGaPN follows a bowing effect instead of Vegard's law. The valence-band splitting (VBS) and spin-orbit splitting of InGaPN are obtained from PR spectra. As the nitrogen concentration increases, the lattice mismatch (the compressive strain) between the epilayer and GaAs substrate decreases while the VBS increases, which implies an increase in the degree of ordering of InGaPN. In addition, the order parameter η of InGaPN is deduced from the VBS.

UR - http://www.scopus.com/inward/record.url?scp=33645214745&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33645214745&partnerID=8YFLogxK

U2 - 10.1063/1.2176182

DO - 10.1063/1.2176182

M3 - Article

AN - SCOPUS:33645214745

SN - 0021-8979

VL - 99

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 5

M1 - 056103

ER -

Valence-band splitting in InGaPN: Effects of epitaxial strain and atomic ordering

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this