Valence-band splitting in InGaPN: Effects of epitaxial strain and atomic ordering

K. I. Lin, T. S. Wang, Y. T. Lu, J. S. Hwang

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8 Citations (Scopus)


Both the epitaxial-strain and atomic-ordering effects in In 0.54Ga0.46P1-y,Ny/GaAs (y = 0%-2.0%) heterostructures are characterized by high-re solution x-ray rocking curve measurements and photoreflectance (PR) spectra at various temperatures. The lattice constant of InGaPN follows a bowing effect instead of Vegard's law. The valence-band splitting (VBS) and spin-orbit splitting of InGaPN are obtained from PR spectra. As the nitrogen concentration increases, the lattice mismatch (the compressive strain) between the epilayer and GaAs substrate decreases while the VBS increases, which implies an increase in the degree of ordering of InGaPN. In addition, the order parameter η of InGaPN is deduced from the VBS.

Original languageEnglish
Article number056103
JournalJournal of Applied Physics
Issue number5
Publication statusPublished - 2006 Mar 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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