Valence excitations and dopant distribution of al doped zno nanowires analyzed by electron energy loss spectroscopy

Cheng Yu Wang, Chien Lin Kuo, Chuan-Pu Liu, Ting Yu Wang, Rong Kun Zheng, Simon P. Ringer

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Valence electron energy loss spectroscopy (VEELS) with scanning transmission electron microscopy (STEM) has been employed to probe the valence excitations and dopant distribution of Al doped ZnO nanowires. The results reveal that while the typical Al concentration is on the order of 10 20 1/cm 3, Al tends to segregate at the surface leading to an Al-rich sheath. In VEEL spectra, O-2p, Zn-3d, Al-3p, O-2s, interband transitions as well as bulk plasmon have been identified. The bulk plasmon peak is blue-shifted, and the projected interband transition decreases from 2.14 to 1.88 eV as the doping concentration increases from 0.83⋯10 20 to 2.18⋯10 20 1/cm 3.

Original languageEnglish
Pages (from-to)10182-10186
Number of pages5
JournalJournal of Nanoscience and Nanotechnology
Volume11
Issue number11
DOIs
Publication statusPublished - 2011 Dec 1

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

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