Variability study of silicon nanowire FETs

Yi Bo Liao; Meng-Hsueh Chiang; Keunwoo Kim; Wei-Chou Hsu

Variability study of silicon nanowire FETs

Yi Bo Liao, Meng-Hsueh Chiang, Keunwoo Kim, Wei-Chou Hsu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this work, impact of device variability for silicon nanowire FETs is assessed and SRAM design implication is presented based on 3-D numerical simulation. Both the conventional and junctionless nanowire FETs are shown to be sensitive to structural variation whereas the former is more tolerable. Both the circular wire and non-circular wire cases for feasible SRAM design with a focus on read noise margin are included in our study.

Original language	English
Title of host publication	Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011
Pages	46-49
Number of pages	4
Publication status	Published - 2011 Nov 23
Event	Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011 - Boston, MA, United States Duration: 2011 Jun 13 → 2011 Jun 16

Publication series

Name	Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011
Volume	2

Other

Other	Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011
Country	United States
City	Boston, MA
Period	11-06-13 → 11-06-16

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Electrical and Electronic Engineering

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title = "Variability study of silicon nanowire FETs",

abstract = "In this work, impact of device variability for silicon nanowire FETs is assessed and SRAM design implication is presented based on 3-D numerical simulation. Both the conventional and junctionless nanowire FETs are shown to be sensitive to structural variation whereas the former is more tolerable. Both the circular wire and non-circular wire cases for feasible SRAM design with a focus on read noise margin are included in our study.",

author = "Liao, {Yi Bo} and Meng-Hsueh Chiang and Keunwoo Kim and Wei-Chou Hsu",

year = "2011",

month = nov,

day = "23",

language = "English",

isbn = "9781439871393",

series = "Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011",

pages = "46--49",

booktitle = "Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011",

note = "Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011 ; Conference date: 13-06-2011 Through 16-06-2011",

}

Liao, YB, Chiang, M-H, Kim, K & Hsu, W-C 2011, Variability study of silicon nanowire FETs. in Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011. Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011, vol. 2, pp. 46-49, Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011, Boston, MA, United States, 11-06-13.

Variability study of silicon nanowire FETs. / Liao, Yi Bo; Chiang, Meng-Hsueh; Kim, Keunwoo; Hsu, Wei-Chou.

Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011. 2011. p. 46-49 (Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011; Vol. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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BT - Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011

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Y2 - 13 June 2011 through 16 June 2011

ER -

Variability study of silicon nanowire FETs

Abstract

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All Science Journal Classification (ASJC) codes

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