Abstract
In this work, impact of device variability for silicon nanowire FETs is assessed and SRAM design implication is presented based on 3-D numerical simulation. Both the conventional and junctionless nanowire FETs are shown to be sensitive to structural variation whereas the former is more tolerable. Both the circular wire and non-circular wire cases for feasible SRAM design with a focus on read noise margin are included in our study.
| Original language | English |
|---|---|
| Title of host publication | Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011 |
| Pages | 46-49 |
| Number of pages | 4 |
| Publication status | Published - 2011 Nov 23 |
| Event | Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011 - Boston, MA, United States Duration: 2011 Jun 13 → 2011 Jun 16 |
Publication series
| Name | Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011 |
|---|---|
| Volume | 2 |
Other
| Other | Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011 |
|---|---|
| Country | United States |
| City | Boston, MA |
| Period | 11-06-13 → 11-06-16 |
All Science Journal Classification (ASJC) codes
- Hardware and Architecture
- Electrical and Electronic Engineering
Fingerprint Dive into the research topics of 'Variability study of silicon nanowire FETs'. Together they form a unique fingerprint.
Cite this
Liao, Y. B., Chiang, M-H., Kim, K., & Hsu, W-C. (2011). Variability study of silicon nanowire FETs. In Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011 (pp. 46-49). (Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011; Vol. 2).