Variation-aware comparative study of 10-nm GAA versus FinFET 6-T SRAM performance and yield

Peng Zheng, Yi Bo Liao, Nattapol Damrongplasit, Meng-Hsueh Chiang, Tsu Jae King Liu

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

This paper benchmarks the performance of gate-all-around (GAA) MOSFETs against that of optimized silicon-on-insulator FinFETs at 10-nm gate length. Variability in transistor performance due to systematic and random variations is estimated with the aid of TCAD 3-D device simulations, for both device structures. The yield of six-transistor SRAM cells implemented with these advanced MOSFET structures is then investigated via a calibrated physically based compact model. The GAA MOSFET technology is projected to provide for 0.1 V lower minimum cell operating voltage with reduced cell area.

Original languageEnglish
Article number6951350
Pages (from-to)3949-3954
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume61
Issue number12
DOIs
Publication statusPublished - 2014 Dec 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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