Variation of the mobility and the two-dimensional electron gas concentration with indium composition in δ-doped GaAs/In x Ga 1-x As/GaAs pseudomorphic structures

Wei-Chou Hsu, C. M. Chen, W. Lin

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13 Citations (Scopus)

Abstract

The electron mobility and the two-dimensional electron gas (2DEG) concentration in different indium compositions (0.1<x<0.6) δ-doped GaAs/In x Ga 1-x As/GaAs pseudomorphic structures grown by low-pressure metalorganic chemical vapor deposition are studied. The electron mobilities of a δ-doped GaAs layer are comparable to those of previous reports. Furthermore, the maximum mobility (5500 and 33 000 cm 2 /V s at 300 and 77 K, respectively) of the proposed pseudomorphic structure appears at x=0.37. Taking into account of strain and quantum effects, the variation trends of calculated 2DEG concentrations are in good agreement with the experimental results.

Original languageEnglish
Pages (from-to)4332-4335
Number of pages4
JournalJournal of Applied Physics
Volume70
Issue number8
DOIs
Publication statusPublished - 1991 Dec 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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