Vertical cavity surface emitting laser diodes

K. Tai, L. Yang, R. Fischer, T. Tanbun-Ek, R. A. Logan, Y. H. Wang, M. Hong, A. Y. Cho

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Vertical cavity surface emitting lasers (VCSELs) were realized in MBE-grown GaAs/AlGaAs and MOVPE-grown InGaAsP/InP material systems with emission wavelengths near 0.87 and 1.3 μm, respectively. The GaAs/AlGaAs VCSELs incorporating epitaxially grown DBR mirrors on both sides of the cavities were operated at room temperature cw condition with maximum output power greater than 1 mW. The InGaAsP/InP VCSEL, which employed a much simpler cavity structure containing metal and dielectric mirrors, operated up to 220 K with a threshold current as low as 5 mA at 77K, indicating that improvements on the cavity design should yield room temperature lasing operation. Single longitudinal mode emission and circular near- and far-field patterns were observed for the two VCSEL structures.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherPubl by Int Soc for Optical Engineering
Pages139-144
Number of pages6
ISBN (Print)0819402575, 9780819402578
DOIs
Publication statusPublished - 1990
EventNonlinear Optical Materials and Devices for Photonic Switching - Los Angeles, CA, USA
Duration: 1990 Jan 161990 Jan 17

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume1216
ISSN (Print)0277-786X

Other

OtherNonlinear Optical Materials and Devices for Photonic Switching
CityLos Angeles, CA, USA
Period90-01-1690-01-17

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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