Vertical cavity surface emitting laser diodes

K. Tai; L. Yang; R. Fischer; T. Tanbun-Ek; R. A. Logan; Y. H. Wang; M. Hong; A. Y. Cho

doi:10.1117/12.18117

Vertical cavity surface emitting laser diodes

K. Tai, L. Yang, R. Fischer, T. Tanbun-Ek, R. A. Logan, Y. H. Wang, M. Hong, A. Y. Cho

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Vertical cavity surface emitting lasers (VCSELs) were realized in MBE-grown GaAs/AlGaAs and MOVPE-grown InGaAsP/InP material systems with emission wavelengths near 0.87 and 1.3 μm, respectively. The GaAs/AlGaAs VCSELs incorporating epitaxially grown DBR mirrors on both sides of the cavities were operated at room temperature cw condition with maximum output power greater than 1 mW. The InGaAsP/InP VCSEL, which employed a much simpler cavity structure containing metal and dielectric mirrors, operated up to 220 K with a threshold current as low as 5 mA at 77K, indicating that improvements on the cavity design should yield room temperature lasing operation. Single longitudinal mode emission and circular near- and far-field patterns were observed for the two VCSEL structures.

Original language	English
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Publisher	Publ by Int Soc for Optical Engineering
Pages	139-144
Number of pages	6
ISBN (Print)	0819402575, 9780819402578
DOIs	https://doi.org/10.1117/12.18117
Publication status	Published - 1990
Event	Nonlinear Optical Materials and Devices for Photonic Switching - Los Angeles, CA, USA Duration: 1990 Jan 16 → 1990 Jan 17

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	1216
ISSN (Print)	0277-786X

Other

Other	Nonlinear Optical Materials and Devices for Photonic Switching
City	Los Angeles, CA, USA
Period	90-01-16 → 90-01-17

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.18117

Cite this

Tai, K., Yang, L., Fischer, R., Tanbun-Ek, T., Logan, R. A., Wang, Y. H., Hong, M., & Cho, A. Y. (1990). Vertical cavity surface emitting laser diodes. In Proceedings of SPIE - The International Society for Optical Engineering (pp. 139-144). (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 1216). Publ by Int Soc for Optical Engineering. https://doi.org/10.1117/12.18117

@inproceedings{cc1328923bd94b01a367c3a6943ac13c,

title = "Vertical cavity surface emitting laser diodes",

abstract = "Vertical cavity surface emitting lasers (VCSELs) were realized in MBE-grown GaAs/AlGaAs and MOVPE-grown InGaAsP/InP material systems with emission wavelengths near 0.87 and 1.3 μm, respectively. The GaAs/AlGaAs VCSELs incorporating epitaxially grown DBR mirrors on both sides of the cavities were operated at room temperature cw condition with maximum output power greater than 1 mW. The InGaAsP/InP VCSEL, which employed a much simpler cavity structure containing metal and dielectric mirrors, operated up to 220 K with a threshold current as low as 5 mA at 77K, indicating that improvements on the cavity design should yield room temperature lasing operation. Single longitudinal mode emission and circular near- and far-field patterns were observed for the two VCSEL structures.",

author = "K. Tai and L. Yang and R. Fischer and T. Tanbun-Ek and Logan, {R. A.} and Wang, {Y. H.} and M. Hong and Cho, {A. Y.}",

year = "1990",

doi = "10.1117/12.18117",

language = "English",

isbn = "0819402575",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "Publ by Int Soc for Optical Engineering",

pages = "139--144",

booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

}

Tai, K, Yang, L, Fischer, R, Tanbun-Ek, T, Logan, RA, Wang, YH, Hong, M & Cho, AY 1990, Vertical cavity surface emitting laser diodes. in Proceedings of SPIE - The International Society for Optical Engineering. Proceedings of SPIE - The International Society for Optical Engineering, vol. 1216, Publ by Int Soc for Optical Engineering, pp. 139-144, Nonlinear Optical Materials and Devices for Photonic Switching, Los Angeles, CA, USA, 90-01-16. https://doi.org/10.1117/12.18117

Vertical cavity surface emitting laser diodes. / Tai, K.; Yang, L.; Fischer, R. et al.
Proceedings of SPIE - The International Society for Optical Engineering. Publ by Int Soc for Optical Engineering, 1990. p. 139-144 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 1216).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Vertical cavity surface emitting laser diodes

AU - Tai, K.

AU - Yang, L.

AU - Fischer, R.

AU - Tanbun-Ek, T.

AU - Logan, R. A.

AU - Wang, Y. H.

AU - Hong, M.

AU - Cho, A. Y.

PY - 1990

Y1 - 1990

N2 - Vertical cavity surface emitting lasers (VCSELs) were realized in MBE-grown GaAs/AlGaAs and MOVPE-grown InGaAsP/InP material systems with emission wavelengths near 0.87 and 1.3 μm, respectively. The GaAs/AlGaAs VCSELs incorporating epitaxially grown DBR mirrors on both sides of the cavities were operated at room temperature cw condition with maximum output power greater than 1 mW. The InGaAsP/InP VCSEL, which employed a much simpler cavity structure containing metal and dielectric mirrors, operated up to 220 K with a threshold current as low as 5 mA at 77K, indicating that improvements on the cavity design should yield room temperature lasing operation. Single longitudinal mode emission and circular near- and far-field patterns were observed for the two VCSEL structures.

AB - Vertical cavity surface emitting lasers (VCSELs) were realized in MBE-grown GaAs/AlGaAs and MOVPE-grown InGaAsP/InP material systems with emission wavelengths near 0.87 and 1.3 μm, respectively. The GaAs/AlGaAs VCSELs incorporating epitaxially grown DBR mirrors on both sides of the cavities were operated at room temperature cw condition with maximum output power greater than 1 mW. The InGaAsP/InP VCSEL, which employed a much simpler cavity structure containing metal and dielectric mirrors, operated up to 220 K with a threshold current as low as 5 mA at 77K, indicating that improvements on the cavity design should yield room temperature lasing operation. Single longitudinal mode emission and circular near- and far-field patterns were observed for the two VCSEL structures.

UR - http://www.scopus.com/inward/record.url?scp=0025680457&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025680457&partnerID=8YFLogxK

U2 - 10.1117/12.18117

DO - 10.1117/12.18117

M3 - Conference contribution

AN - SCOPUS:0025680457

SN - 0819402575

SN - 9780819402578

T3 - Proceedings of SPIE - The International Society for Optical Engineering

SP - 139

EP - 144

BT - Proceedings of SPIE - The International Society for Optical Engineering

PB - Publ by Int Soc for Optical Engineering

T2 - Nonlinear Optical Materials and Devices for Photonic Switching

Y2 - 16 January 1990 through 17 January 1990

ER -

Vertical cavity surface emitting laser diodes

Abstract

Publication series

Other

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this