Vertical cavity top-surface emitting lasers with thin Ag mirrors and hybrid reflectors

M. Hong, L. W. Tu, J. Gamelin, Yeong-Her Wang, R. J. Fischer, E. F. Schubert, K. Tai, G. Hasnain, J. P. Mannaerts, B. E. Weir, J. D. Wynn, R. F. Kopf, G. J. Zydzik, A. Y. Cho

Research output: Contribution to journalArticle

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Abstract

Three types of vertical cavity surface emitting lasers based on GaAs/AlGaAs have been grown by molecular beam epitaxy (MBE). The laser structures with top emission have been evolved from a simple double heterostructure (DH) with n-type distributed Bragg reflectors (DBR) as the bottom mirror and a semitransparent Ag as the top mirror, to a DH structure with a hybrid reflector consisting of a thin metal and a few pairs of p-DBR as the top mirror, and to a 3-QW structure again with a hybrid reflector as the top mirror. MBE growth of these three device structures is discussed, particularly on the in-situ growth of metals on GaAs. Devices have been fabricated and measured. A theoretical model has been used to gain an understanding of the parameters in each design. The MBE growth techniques have been improved to modify the heterostructural interface in the DBR to reduce the series resistance. The laser performance has been improved from a high threshold current in the first structure to a much lower threshold current in the second structure and finally to a cw room temperature operation with low threshold currents in the third structure.

Original languageEnglish
Pages (from-to)1052-1056
Number of pages5
JournalJournal of Crystal Growth
Volume111
Issue number1-4
DOIs
Publication statusPublished - 1991 May 2

Fingerprint

Surface emitting lasers
surface emitting lasers
Distributed Bragg reflectors
reflectors
Mirrors
Bragg reflectors
threshold currents
Molecular beam epitaxy
mirrors
cavities
molecular beam epitaxy
Heterojunctions
Metals
Lasers
metals
lasers
aluminum gallium arsenides
room temperature
Temperature
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Hong, M., Tu, L. W., Gamelin, J., Wang, Y-H., Fischer, R. J., Schubert, E. F., ... Cho, A. Y. (1991). Vertical cavity top-surface emitting lasers with thin Ag mirrors and hybrid reflectors. Journal of Crystal Growth, 111(1-4), 1052-1056. https://doi.org/10.1016/0022-0248(91)91131-S
Hong, M. ; Tu, L. W. ; Gamelin, J. ; Wang, Yeong-Her ; Fischer, R. J. ; Schubert, E. F. ; Tai, K. ; Hasnain, G. ; Mannaerts, J. P. ; Weir, B. E. ; Wynn, J. D. ; Kopf, R. F. ; Zydzik, G. J. ; Cho, A. Y. / Vertical cavity top-surface emitting lasers with thin Ag mirrors and hybrid reflectors. In: Journal of Crystal Growth. 1991 ; Vol. 111, No. 1-4. pp. 1052-1056.
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abstract = "Three types of vertical cavity surface emitting lasers based on GaAs/AlGaAs have been grown by molecular beam epitaxy (MBE). The laser structures with top emission have been evolved from a simple double heterostructure (DH) with n-type distributed Bragg reflectors (DBR) as the bottom mirror and a semitransparent Ag as the top mirror, to a DH structure with a hybrid reflector consisting of a thin metal and a few pairs of p-DBR as the top mirror, and to a 3-QW structure again with a hybrid reflector as the top mirror. MBE growth of these three device structures is discussed, particularly on the in-situ growth of metals on GaAs. Devices have been fabricated and measured. A theoretical model has been used to gain an understanding of the parameters in each design. The MBE growth techniques have been improved to modify the heterostructural interface in the DBR to reduce the series resistance. The laser performance has been improved from a high threshold current in the first structure to a much lower threshold current in the second structure and finally to a cw room temperature operation with low threshold currents in the third structure.",
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Hong, M, Tu, LW, Gamelin, J, Wang, Y-H, Fischer, RJ, Schubert, EF, Tai, K, Hasnain, G, Mannaerts, JP, Weir, BE, Wynn, JD, Kopf, RF, Zydzik, GJ & Cho, AY 1991, 'Vertical cavity top-surface emitting lasers with thin Ag mirrors and hybrid reflectors', Journal of Crystal Growth, vol. 111, no. 1-4, pp. 1052-1056. https://doi.org/10.1016/0022-0248(91)91131-S

Vertical cavity top-surface emitting lasers with thin Ag mirrors and hybrid reflectors. / Hong, M.; Tu, L. W.; Gamelin, J.; Wang, Yeong-Her; Fischer, R. J.; Schubert, E. F.; Tai, K.; Hasnain, G.; Mannaerts, J. P.; Weir, B. E.; Wynn, J. D.; Kopf, R. F.; Zydzik, G. J.; Cho, A. Y.

In: Journal of Crystal Growth, Vol. 111, No. 1-4, 02.05.1991, p. 1052-1056.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Vertical cavity top-surface emitting lasers with thin Ag mirrors and hybrid reflectors

AU - Hong, M.

AU - Tu, L. W.

AU - Gamelin, J.

AU - Wang, Yeong-Her

AU - Fischer, R. J.

AU - Schubert, E. F.

AU - Tai, K.

AU - Hasnain, G.

AU - Mannaerts, J. P.

AU - Weir, B. E.

AU - Wynn, J. D.

AU - Kopf, R. F.

AU - Zydzik, G. J.

AU - Cho, A. Y.

PY - 1991/5/2

Y1 - 1991/5/2

N2 - Three types of vertical cavity surface emitting lasers based on GaAs/AlGaAs have been grown by molecular beam epitaxy (MBE). The laser structures with top emission have been evolved from a simple double heterostructure (DH) with n-type distributed Bragg reflectors (DBR) as the bottom mirror and a semitransparent Ag as the top mirror, to a DH structure with a hybrid reflector consisting of a thin metal and a few pairs of p-DBR as the top mirror, and to a 3-QW structure again with a hybrid reflector as the top mirror. MBE growth of these three device structures is discussed, particularly on the in-situ growth of metals on GaAs. Devices have been fabricated and measured. A theoretical model has been used to gain an understanding of the parameters in each design. The MBE growth techniques have been improved to modify the heterostructural interface in the DBR to reduce the series resistance. The laser performance has been improved from a high threshold current in the first structure to a much lower threshold current in the second structure and finally to a cw room temperature operation with low threshold currents in the third structure.

AB - Three types of vertical cavity surface emitting lasers based on GaAs/AlGaAs have been grown by molecular beam epitaxy (MBE). The laser structures with top emission have been evolved from a simple double heterostructure (DH) with n-type distributed Bragg reflectors (DBR) as the bottom mirror and a semitransparent Ag as the top mirror, to a DH structure with a hybrid reflector consisting of a thin metal and a few pairs of p-DBR as the top mirror, and to a 3-QW structure again with a hybrid reflector as the top mirror. MBE growth of these three device structures is discussed, particularly on the in-situ growth of metals on GaAs. Devices have been fabricated and measured. A theoretical model has been used to gain an understanding of the parameters in each design. The MBE growth techniques have been improved to modify the heterostructural interface in the DBR to reduce the series resistance. The laser performance has been improved from a high threshold current in the first structure to a much lower threshold current in the second structure and finally to a cw room temperature operation with low threshold currents in the third structure.

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U2 - 10.1016/0022-0248(91)91131-S

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M3 - Article

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JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

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ER -