Vertical GaN-Based LEDs with Naturally Textured Surface Formed by Patterned Sapphire Substrate with Self-Assembled Ag Nanodots as Etching Mask

Yu Hsiang Yeh, Jinn Kong Sheu, Ming Lun Lee, Wei Yu Yen, Li Chi Peng, Chun Yi Yeh, Po Hsun Liao, Po Cheng Chen, Wei Chih Lai

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We propose a new pattern-transfer method comprising laser liftoff and wafer bonding process; the former was used to separate GaN-based epitaxial layers from patterned sapphire substrates (PSSs) with self-assembled surface nanodots, and the latter was used to combine the epitaxial layers with the Si substrate. The nanodots on the PSS surface were formed by dry etching with self-assembled Ag nanoislands as an etching mask. The fabricated vertical GaN-based light-emitting diodes (VLEDs) presented an in situ nanotextured surface. At a driving current of 350 mA, the VLEDs increased the output power by ∼ 17 % compared with the conventional VLEDs without a nanotextured surface. The main enhancement can be attributed to the increase in light-extraction efficiency of photons emitted inside the LEDs.

Original languageEnglish
Article number7202874
Pages (from-to)2919-2923
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume62
Issue number9
DOIs
Publication statusPublished - 2015 Sep 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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