Vertical graphene-base hot-electron transistor

Caifu Zeng, Emil B. Song, Minsheng Wang, Sejoon Lee, Carlos M. Torres, Jianshi Tang, Bruce H. Weiller, Kang L. Wang

Research output: Contribution to journalArticlepeer-review

94 Citations (Scopus)


We demonstrate vertical graphene-base hot-electron transistors (GB-HETs) with a variety of structures and material parameters. Our GB-HETs exhibit a current saturation with a high current on-off ratio (>105), which results from both the vertical transport of hot electrons across the ultrathin graphene base and the filtering of hot electrons through a built-in energy barrier. The influences of the materials and their thicknesses used for the tunneling and filtering barriers on the common-base current gain α are studied. The optimization of the SiO2 thickness and using HfO 2 as the filtering barrier significantly improves the common-base current gain α by more than 2 orders of magnitude. The results demonstrate that GB-HETs have a great potential for high-frequency, high-speed, and high-density integrated circuits.

Original languageEnglish
Pages (from-to)2370-2375
Number of pages6
JournalNano letters
Issue number6
Publication statusPublished - 2013 Jun 12

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering


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