TY - JOUR
T1 - Vertical high quality mirrorlike facet of GaN-based device by reactive ion etching
AU - Chen, Chin Hsiang
AU - Chang, Shoou Jinn
AU - Su, Yan Kuin
AU - Chi, Gou Chung
AU - Sheu, Jinn Kong
AU - Lin, I. Chao
N1 - Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2001/4
Y1 - 2001/4
N2 - Reactive ion etching (RIE) of GaN has been performed using BCl3 and additives Ar, CH4, and N2 to BCl3 plasma. The etching rate, surface roughness and the etch profile have been investigated. When BCl3/Ar was used as the RIE plasma source with 200 W RF power and 60 m Torr pressure, the highest etching rates of 505 Å/min and 448 Å/min were obtained for n- and p-GaN, respectively. It was found that the addition of CH4 and N2 to the BCl3 plasma would result in significant changes of the etching results, such as the etching rate and surface morphology. It was also found that with the proper etching parameter, the mirrorlike facet of GaN can be obtained using BCl3/Ar/CH4/N2 by RIE.
AB - Reactive ion etching (RIE) of GaN has been performed using BCl3 and additives Ar, CH4, and N2 to BCl3 plasma. The etching rate, surface roughness and the etch profile have been investigated. When BCl3/Ar was used as the RIE plasma source with 200 W RF power and 60 m Torr pressure, the highest etching rates of 505 Å/min and 448 Å/min were obtained for n- and p-GaN, respectively. It was found that the addition of CH4 and N2 to the BCl3 plasma would result in significant changes of the etching results, such as the etching rate and surface morphology. It was also found that with the proper etching parameter, the mirrorlike facet of GaN can be obtained using BCl3/Ar/CH4/N2 by RIE.
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U2 - 10.1143/jjap.40.2762
DO - 10.1143/jjap.40.2762
M3 - Article
AN - SCOPUS:0035300626
VL - 40
SP - 2762
EP - 2764
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 4 B
ER -