Vertical high quality mirrorlike facet of GaN-based device by reactive ion etching

Chin Hsiang Chen; Shoou Jinn Chang; Yan Kuin Su; Gou Chung Chi; Jinn Kong Sheu; I. Chao Lin

doi:10.1143/jjap.40.2762

Vertical high quality mirrorlike facet of GaN-based device by reactive ion etching

Chin Hsiang Chen, Shoou Jinn Chang, Yan Kuin Su, Gou Chung Chi, Jinn Kong Sheu, I. Chao Lin

Research output: Contribution to journal › Article › peer-review

44 Citations (Scopus)

Abstract

Reactive ion etching (RIE) of GaN has been performed using BCl₃ and additives Ar, CH₄, and N₂ to BCl₃ plasma. The etching rate, surface roughness and the etch profile have been investigated. When BCl₃/Ar was used as the RIE plasma source with 200 W RF power and 60 m Torr pressure, the highest etching rates of 505 Å/min and 448 Å/min were obtained for n- and p-GaN, respectively. It was found that the addition of CH₄ and N₂ to the BCl₃ plasma would result in significant changes of the etching results, such as the etching rate and surface morphology. It was also found that with the proper etching parameter, the mirrorlike facet of GaN can be obtained using BCl₃/Ar/CH₄/N₂ by RIE.

Original language	English
Pages (from-to)	2762-2764
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	40
Issue number	4 B
DOIs	https://doi.org/10.1143/jjap.40.2762
Publication status	Published - 2001 Apr

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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@article{bd80f76b5d734926931d2067a3817859,

title = "Vertical high quality mirrorlike facet of GaN-based device by reactive ion etching",

abstract = "Reactive ion etching (RIE) of GaN has been performed using BCl3 and additives Ar, CH4, and N2 to BCl3 plasma. The etching rate, surface roughness and the etch profile have been investigated. When BCl3/Ar was used as the RIE plasma source with 200 W RF power and 60 m Torr pressure, the highest etching rates of 505 {\AA}/min and 448 {\AA}/min were obtained for n- and p-GaN, respectively. It was found that the addition of CH4 and N2 to the BCl3 plasma would result in significant changes of the etching results, such as the etching rate and surface morphology. It was also found that with the proper etching parameter, the mirrorlike facet of GaN can be obtained using BCl3/Ar/CH4/N2 by RIE.",

author = "Chen, {Chin Hsiang} and Chang, {Shoou Jinn} and Su, {Yan Kuin} and Chi, {Gou Chung} and Sheu, {Jinn Kong} and Lin, {I. Chao}",

year = "2001",

month = apr,

doi = "10.1143/jjap.40.2762",

language = "English",

volume = "40",

pages = "2762--2764",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "4 B",

}

Vertical high quality mirrorlike facet of GaN-based device by reactive ion etching. / Chen, Chin Hsiang; Chang, Shoou Jinn; Su, Yan Kuin; Chi, Gou Chung; Sheu, Jinn Kong; Lin, I. Chao.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 40, No. 4 B, 04.2001, p. 2762-2764.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Vertical high quality mirrorlike facet of GaN-based device by reactive ion etching

AU - Chen, Chin Hsiang

AU - Chang, Shoou Jinn

AU - Su, Yan Kuin

AU - Chi, Gou Chung

AU - Sheu, Jinn Kong

AU - Lin, I. Chao

PY - 2001/4

Y1 - 2001/4

N2 - Reactive ion etching (RIE) of GaN has been performed using BCl3 and additives Ar, CH4, and N2 to BCl3 plasma. The etching rate, surface roughness and the etch profile have been investigated. When BCl3/Ar was used as the RIE plasma source with 200 W RF power and 60 m Torr pressure, the highest etching rates of 505 Å/min and 448 Å/min were obtained for n- and p-GaN, respectively. It was found that the addition of CH4 and N2 to the BCl3 plasma would result in significant changes of the etching results, such as the etching rate and surface morphology. It was also found that with the proper etching parameter, the mirrorlike facet of GaN can be obtained using BCl3/Ar/CH4/N2 by RIE.

AB - Reactive ion etching (RIE) of GaN has been performed using BCl3 and additives Ar, CH4, and N2 to BCl3 plasma. The etching rate, surface roughness and the etch profile have been investigated. When BCl3/Ar was used as the RIE plasma source with 200 W RF power and 60 m Torr pressure, the highest etching rates of 505 Å/min and 448 Å/min were obtained for n- and p-GaN, respectively. It was found that the addition of CH4 and N2 to the BCl3 plasma would result in significant changes of the etching results, such as the etching rate and surface morphology. It was also found that with the proper etching parameter, the mirrorlike facet of GaN can be obtained using BCl3/Ar/CH4/N2 by RIE.

UR - http://www.scopus.com/inward/record.url?scp=0035300626&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035300626&partnerID=8YFLogxK

U2 - 10.1143/jjap.40.2762

DO - 10.1143/jjap.40.2762

M3 - Article

AN - SCOPUS:0035300626

VL - 40

SP - 2762

EP - 2764

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 4 B

ER -