Vertical high quality mirrorlike facet of GaN-based device by reactive ion etching

Chin Hsiang Chen, Shoou Jinn Chang, Yan Kuin Su, Gou Chung Chi, Jinn Kong Sheu, I. Chao Lin

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45 Citations (Scopus)


Reactive ion etching (RIE) of GaN has been performed using BCl3 and additives Ar, CH4, and N2 to BCl3 plasma. The etching rate, surface roughness and the etch profile have been investigated. When BCl3/Ar was used as the RIE plasma source with 200 W RF power and 60 m Torr pressure, the highest etching rates of 505 Å/min and 448 Å/min were obtained for n- and p-GaN, respectively. It was found that the addition of CH4 and N2 to the BCl3 plasma would result in significant changes of the etching results, such as the etching rate and surface morphology. It was also found that with the proper etching parameter, the mirrorlike facet of GaN can be obtained using BCl3/Ar/CH4/N2 by RIE.

Original languageEnglish
Pages (from-to)2762-2764
Number of pages3
JournalJapanese Journal of Applied Physics
Issue number4 B
Publication statusPublished - 2001 Apr

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)


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