Vertical InGaN light-emitting diodes with a sapphire-face-up structure

Y. C. Yang, Jinn Kong Sheu, Ming Lun Lee, Shang Ju Tu, Feng Wen Huang, Wei Chih Lai, Schang Jing Hon, Tsun Kai Ko

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9 Citations (Scopus)

Abstract

Vertical GaN-based light-emitting diodes (LEDs) were fabricated with a Si substrate using the wafer-bonding technique. Lapping and dryetching processes were performed for thinning the sapphire substrate instead of removing this substrate using the laser lift-off technique and the thinning process associated with the wafer-bonding technique to feature LEDs with a sapphire-face-up structure and vertical conduction property. Compared with conventional lateral GaN/sapphire-based LEDs, GaN/Sibased vertical LEDs exhibit higher light output power and less power degradation at a high driving current, which could be attributed to the fact that vertical LEDs behave in a manner similar to flip-chip GaN/sapphire LEDs with excellent heat conduction. In addition, with an injection current of 350 mA, the output power (or forward voltage) of fabricated vertical LEDs can be enhanced (or reduced) by a magnitude of 60% (or 5%) compared with conventional GaN/sapphire-based LEDs.

Original languageEnglish
Pages (from-to)A119-A124
JournalOptics Express
Volume20
Issue number101
DOIs
Publication statusPublished - 2012 Jan 2

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

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    Yang, Y. C., Sheu, J. K., Lee, M. L., Tu, S. J., Huang, F. W., Lai, W. C., Hon, S. J., & Ko, T. K. (2012). Vertical InGaN light-emitting diodes with a sapphire-face-up structure. Optics Express, 20(101), A119-A124. https://doi.org/10.1364/OE.20.00A119