Vertical InGaN light-emitting diodes with Ag paste as bonding layer

Y. C. Yang, Jinn Kong Sheu, Ming Lun Lee, Che Kang Hsu, Shang Ju Tu, Shu Yen Liu, C. C. Yang, Feng Wen Huang

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Vertical InGaN-based light-emitting diodes (LEDs) were fabricated with a Si substrate using Ag paste as bonding layer. Vertical LEDs with Ag paste bonding layer were bonded with Si substrate at a low temperature of 140°C. In addition to the low-temperature bonding process, the soft property of Ag paste could better alleviate thermal stress compared with conventional eutectic metal bonding layer such as Au-Sn. Under the same test conditions, these two LEDs showed similar optical and electrical properties and reliability. However, LEDs with Ag-paste bonding layer were fabricated through a low-temperature bonding process. The characteristic of soft solder enables a relatively wider process window, such as bonding pressure and temperature, and a higher yield as compared with the vertical LEDs with Au-Sn eutectic bonding layer.

Original languageEnglish
Pages (from-to)949-951
Number of pages3
JournalMicroelectronics Reliability
Volume52
Issue number5
DOIs
Publication statusPublished - 2012 May 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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  • Cite this

    Yang, Y. C., Sheu, J. K., Lee, M. L., Hsu, C. K., Tu, S. J., Liu, S. Y., Yang, C. C., & Huang, F. W. (2012). Vertical InGaN light-emitting diodes with Ag paste as bonding layer. Microelectronics Reliability, 52(5), 949-951. https://doi.org/10.1016/j.microrel.2011.06.067