Abstract
Vertical single-crystal ZnO nanowires with uniform diameter and uniform length were selectively grown on ZnO:Ga/glass templates at 600°C by a self-catalyzed vapor-liquid-solid process without any metal catalyst. It was found that the ZnO nanowires are grown preferred oriented in the (002) direction with a small X-ray diffraction full-width half-maximum. Photoluminescence, field-emission scanning electron microscopy, and high-resolution transmission electron microscopy measurements also confirmed good crystal quality of our ZnO nanowires. Field emitters using these ZnO nanowires were also fabricated. It was found that threshold field of the fabricated field emitters was 14 V/μm. With an applied electric field of 24 V/μm, it was found that the emission current density was around 0.1 mA/cm 2
| Original language | English |
|---|---|
| Pages (from-to) | 649-654 |
| Number of pages | 6 |
| Journal | IEEE Transactions on Nanotechnology |
| Volume | 4 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2005 Nov |
All Science Journal Classification (ASJC) codes
- Computer Science Applications
- Electrical and Electronic Engineering
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