Vertical-type 3D/Quasi-2D n-p Heterojunction Perovskite Photodetector

Yuan Wen Hsiao, Bi Shane Cheng, Hung Chieh Hsu, Shih Hsiung Wu, Hsuan Ta Wu, Ching Chich Leu, Chuan Feng Shih

Research output: Contribution to journalArticlepeer-review


This research demonstrates a state-of-the-art vertical-transport photodetector with an n-type 3D MAPbI3/p-type quasi-2D (Q-2D) BA2MA2Pb3I10 perovskite heterojunction. This structure introduces a ≈0.6 V built-in electric field at the n-p junction that greatly improves the characteristics of the perovskite photodetector, and the presence of Q-2D perovskite on the surface improves the life. The electrical polarities of the 3D and the Q-2D perovskite layers are simply controlled by self-constituent doping, making clearly defined n-p characteristics. Doctor-blade coating is used to fabricate the photodetector with a large area. The Q-2D materials with highly oriented (040) Q-2D (n = 2,3) planes are near the surface, and the (111) preferred planes mixed with high index Q-2D materials (n = 4,5) are found near the 3D/Q-2D interface. The stacking and interface are beneficial for carrier extraction and transport, yielding an external quantum efficiency of 77.9%, a carrier lifetime long as 295.7 ns, and a responsibility of 0.41 A W−1. A low dark current density of 6.2 × 10−7 mA cm−2 and a high detectivity of 2.82 × 1013 Jones are obtained. Rise time and fall time are fast as 1.33 and 10.1 µs, respectively. The results show the application potential of 3D/Q-2D n-p junction perovskite photodetectors.

Original languageEnglish
Article number2300169
JournalAdvanced Functional Materials
Issue number21
Publication statusPublished - 2023 May 17

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Biomaterials
  • Materials Science(all)
  • Condensed Matter Physics
  • Electrochemistry


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