TY - JOUR
T1 - Vertical-type 3D/Quasi-2D n-p Heterojunction Perovskite Photodetector
AU - Hsiao, Yuan Wen
AU - Cheng, Bi Shane
AU - Hsu, Hung Chieh
AU - Wu, Shih Hsiung
AU - Wu, Hsuan Ta
AU - Leu, Ching Chich
AU - Shih, Chuan Feng
N1 - Funding Information:
The authors were thankful for the support of the National Science and Technology Council under Contract No. (111‐2224‐E‐006‐006) and Taiwan Semiconductor Research Institute (JDP110‐Y1‐021). The financial support from Symbio, Inc. was also appreciated. The authors would like to thank Ms. Hui–Jung Shih with the Core Facility Center of National Cheng Kung University for supporting the use of HR‐SEM (Hitachi SU8000) and BRUKER XFlash 5010. Additionally, this work was also grateful by the Hierarchical Green‐Energy Materials (Hi‐GEM) Research Center supported, by the Higher Education Sprout Project of the Ministry of Education (MOST 110‐2634‐F‐006 ‐017) in Taiwan.
Funding Information:
The authors were thankful for the support of the National Science and Technology Council under Contract No. (111-2224-E-006-006) and Taiwan Semiconductor Research Institute (JDP110-Y1-021). The financial support from Symbio, Inc. was also appreciated. The authors would like to thank Ms. Hui–Jung Shih with the Core Facility Center of National Cheng Kung University for supporting the use of HR-SEM (Hitachi SU8000) and BRUKER XFlash 5010. Additionally, this work was also grateful by the Hierarchical Green-Energy Materials (Hi-GEM) Research Center supported, by the Higher Education Sprout Project of the Ministry of Education (MOST 110-2634-F-006 -017) in Taiwan.
Publisher Copyright:
© 2023 Wiley-VCH GmbH.
PY - 2023/5/17
Y1 - 2023/5/17
N2 - This research demonstrates a state-of-the-art vertical-transport photodetector with an n-type 3D MAPbI3/p-type quasi-2D (Q-2D) BA2MA2Pb3I10 perovskite heterojunction. This structure introduces a ≈0.6 V built-in electric field at the n-p junction that greatly improves the characteristics of the perovskite photodetector, and the presence of Q-2D perovskite on the surface improves the life. The electrical polarities of the 3D and the Q-2D perovskite layers are simply controlled by self-constituent doping, making clearly defined n-p characteristics. Doctor-blade coating is used to fabricate the photodetector with a large area. The Q-2D materials with highly oriented (040) Q-2D (n = 2,3) planes are near the surface, and the (111) preferred planes mixed with high index Q-2D materials (n = 4,5) are found near the 3D/Q-2D interface. The stacking and interface are beneficial for carrier extraction and transport, yielding an external quantum efficiency of 77.9%, a carrier lifetime long as 295.7 ns, and a responsibility of 0.41 A W−1. A low dark current density of 6.2 × 10−7 mA cm−2 and a high detectivity of 2.82 × 1013 Jones are obtained. Rise time and fall time are fast as 1.33 and 10.1 µs, respectively. The results show the application potential of 3D/Q-2D n-p junction perovskite photodetectors.
AB - This research demonstrates a state-of-the-art vertical-transport photodetector with an n-type 3D MAPbI3/p-type quasi-2D (Q-2D) BA2MA2Pb3I10 perovskite heterojunction. This structure introduces a ≈0.6 V built-in electric field at the n-p junction that greatly improves the characteristics of the perovskite photodetector, and the presence of Q-2D perovskite on the surface improves the life. The electrical polarities of the 3D and the Q-2D perovskite layers are simply controlled by self-constituent doping, making clearly defined n-p characteristics. Doctor-blade coating is used to fabricate the photodetector with a large area. The Q-2D materials with highly oriented (040) Q-2D (n = 2,3) planes are near the surface, and the (111) preferred planes mixed with high index Q-2D materials (n = 4,5) are found near the 3D/Q-2D interface. The stacking and interface are beneficial for carrier extraction and transport, yielding an external quantum efficiency of 77.9%, a carrier lifetime long as 295.7 ns, and a responsibility of 0.41 A W−1. A low dark current density of 6.2 × 10−7 mA cm−2 and a high detectivity of 2.82 × 1013 Jones are obtained. Rise time and fall time are fast as 1.33 and 10.1 µs, respectively. The results show the application potential of 3D/Q-2D n-p junction perovskite photodetectors.
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U2 - 10.1002/adfm.202300169
DO - 10.1002/adfm.202300169
M3 - Article
AN - SCOPUS:85148890870
SN - 1616-301X
VL - 33
JO - Advanced Functional Materials
JF - Advanced Functional Materials
IS - 21
M1 - 2300169
ER -