Vertically well aligned P-doped ZnO nanowires synthesized on ZnO-Ga/glass templates

Cheng Liang Hsu, Shoou Jinn Chang, Yan Ru Lin, Song Yeu Tsai, I. Cherng Chen

Research output: Contribution to journalArticlepeer-review

63 Citations (Scopus)

Abstract

Vertically well aligned P-doped ZnO nanowires were prepared on ZnO-Ga/glass templates at 550°C by reactive evaporation without metal catalysts and the nanowires were found to be single crystalline with the würtzite structure, oriented in the c-axis direction; the P-doping shortened the physical lengths of the ZnO nanowires without changing their diameter, and furthermore, the introduction of P atoms resulted in a much weaker and broader ZnO band edge emission.

Original languageEnglish
Pages (from-to)3571-3573
Number of pages3
JournalChemical Communications
Issue number28
DOIs
Publication statusPublished - 2005 Jan 1

All Science Journal Classification (ASJC) codes

  • Catalysis
  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • General Chemistry
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Fingerprint

Dive into the research topics of 'Vertically well aligned P-doped ZnO nanowires synthesized on ZnO-Ga/glass templates'. Together they form a unique fingerprint.

Cite this