Abstract
In this letter a new type of GaAs/In0.25Ga0.75As/GaAs pseudomorphic single quantum well heterostructure by selectively double-δ-doping GaAs layers on both sides of the InGaAs channel grown by low-pressure metalorganic chemical vapor deposition is demonstrated. An extremely high two-dimensional electron gas concentration more than 1×1013 cm-2 with enhanced mobility of 2900 cm 2/V s is achieved. This type of structure can easily break through the doping limitation in conventional heterostructures while keeping a high mobility.
Original language | English |
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Pages (from-to) | 509-511 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 63 |
Issue number | 4 |
DOIs | |
Publication status | Published - 1993 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)