Very high two-dimensional electron gas concentrations with enhanced mobilities in selectively double-δ-doped GaAs/InGaAs pseudomorphic single quantum well heterostructures

H. M. Shieh, Wei-Chou Hsu, C. L. Wu

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

In this letter a new type of GaAs/In0.25Ga0.75As/GaAs pseudomorphic single quantum well heterostructure by selectively double-δ-doping GaAs layers on both sides of the InGaAs channel grown by low-pressure metalorganic chemical vapor deposition is demonstrated. An extremely high two-dimensional electron gas concentration more than 1×1013 cm-2 with enhanced mobility of 2900 cm 2/V s is achieved. This type of structure can easily break through the doping limitation in conventional heterostructures while keeping a high mobility.

Original languageEnglish
Pages (from-to)509-511
Number of pages3
JournalApplied Physics Letters
Volume63
Issue number4
DOIs
Publication statusPublished - 1993 Dec 1

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electron gas
quantum wells
metalorganic chemical vapor deposition
low pressure

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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T1 - Very high two-dimensional electron gas concentrations with enhanced mobilities in selectively double-δ-doped GaAs/InGaAs pseudomorphic single quantum well heterostructures

AU - Shieh, H. M.

AU - Hsu, Wei-Chou

AU - Wu, C. L.

PY - 1993/12/1

Y1 - 1993/12/1

N2 - In this letter a new type of GaAs/In0.25Ga0.75As/GaAs pseudomorphic single quantum well heterostructure by selectively double-δ-doping GaAs layers on both sides of the InGaAs channel grown by low-pressure metalorganic chemical vapor deposition is demonstrated. An extremely high two-dimensional electron gas concentration more than 1×1013 cm-2 with enhanced mobility of 2900 cm 2/V s is achieved. This type of structure can easily break through the doping limitation in conventional heterostructures while keeping a high mobility.

AB - In this letter a new type of GaAs/In0.25Ga0.75As/GaAs pseudomorphic single quantum well heterostructure by selectively double-δ-doping GaAs layers on both sides of the InGaAs channel grown by low-pressure metalorganic chemical vapor deposition is demonstrated. An extremely high two-dimensional electron gas concentration more than 1×1013 cm-2 with enhanced mobility of 2900 cm 2/V s is achieved. This type of structure can easily break through the doping limitation in conventional heterostructures while keeping a high mobility.

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