Very high two-dimensional electron gas concentrations with enhanced mobilities in selectively double-δ-doped GaAs/InGaAs pseudomorphic single quantum well heterostructures

H. M. Shieh; W. C. Hsu; C. L. Wu

doi:10.1063/1.109988

Very high two-dimensional electron gas concentrations with enhanced mobilities in selectively double-δ-doped GaAs/InGaAs pseudomorphic single quantum well heterostructures

H. M. Shieh, W. C. Hsu, C. L. Wu

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

In this letter a new type of GaAs/In_0.25Ga_0.75As/GaAs pseudomorphic single quantum well heterostructure by selectively double-δ-doping GaAs layers on both sides of the InGaAs channel grown by low-pressure metalorganic chemical vapor deposition is demonstrated. An extremely high two-dimensional electron gas concentration more than 1×10¹³ cm^-2 with enhanced mobility of 2900 cm ²/V s is achieved. This type of structure can easily break through the doping limitation in conventional heterostructures while keeping a high mobility.

Original language	English
Pages (from-to)	509-511
Number of pages	3
Journal	Applied Physics Letters
Volume	63
Issue number	4
DOIs	https://doi.org/10.1063/1.109988
Publication status	Published - 1993

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.109988

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AU - Shieh, H. M.

AU - Hsu, W. C.

AU - Wu, C. L.

PY - 1993

Y1 - 1993

N2 - In this letter a new type of GaAs/In0.25Ga0.75As/GaAs pseudomorphic single quantum well heterostructure by selectively double-δ-doping GaAs layers on both sides of the InGaAs channel grown by low-pressure metalorganic chemical vapor deposition is demonstrated. An extremely high two-dimensional electron gas concentration more than 1×1013 cm-2 with enhanced mobility of 2900 cm 2/V s is achieved. This type of structure can easily break through the doping limitation in conventional heterostructures while keeping a high mobility.

AB - In this letter a new type of GaAs/In0.25Ga0.75As/GaAs pseudomorphic single quantum well heterostructure by selectively double-δ-doping GaAs layers on both sides of the InGaAs channel grown by low-pressure metalorganic chemical vapor deposition is demonstrated. An extremely high two-dimensional electron gas concentration more than 1×1013 cm-2 with enhanced mobility of 2900 cm 2/V s is achieved. This type of structure can easily break through the doping limitation in conventional heterostructures while keeping a high mobility.

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