Abstract
In this letter a new type of GaAs/In0.25Ga0.75As/GaAs pseudomorphic single quantum well heterostructure by selectively double-δ-doping GaAs layers on both sides of the InGaAs channel grown by low-pressure metalorganic chemical vapor deposition is demonstrated. An extremely high two-dimensional electron gas concentration more than 1×1013 cm-2 with enhanced mobility of 2900 cm 2/V s is achieved. This type of structure can easily break through the doping limitation in conventional heterostructures while keeping a high mobility.
| Original language | English |
|---|---|
| Pages (from-to) | 509-511 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 63 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 1993 Dec 1 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
Cite this
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Very high two-dimensional electron gas concentrations with enhanced mobilities in selectively double-δ-doped GaAs/InGaAs pseudomorphic single quantum well heterostructures. / Shieh, H. M.; Hsu, Wei-Chou; Wu, C. L.
In: Applied Physics Letters, Vol. 63, No. 4, 01.12.1993, p. 509-511.Research output: Contribution to journal › Article
TY - JOUR
T1 - Very high two-dimensional electron gas concentrations with enhanced mobilities in selectively double-δ-doped GaAs/InGaAs pseudomorphic single quantum well heterostructures
AU - Shieh, H. M.
AU - Hsu, Wei-Chou
AU - Wu, C. L.
PY - 1993/12/1
Y1 - 1993/12/1
N2 - In this letter a new type of GaAs/In0.25Ga0.75As/GaAs pseudomorphic single quantum well heterostructure by selectively double-δ-doping GaAs layers on both sides of the InGaAs channel grown by low-pressure metalorganic chemical vapor deposition is demonstrated. An extremely high two-dimensional electron gas concentration more than 1×1013 cm-2 with enhanced mobility of 2900 cm 2/V s is achieved. This type of structure can easily break through the doping limitation in conventional heterostructures while keeping a high mobility.
AB - In this letter a new type of GaAs/In0.25Ga0.75As/GaAs pseudomorphic single quantum well heterostructure by selectively double-δ-doping GaAs layers on both sides of the InGaAs channel grown by low-pressure metalorganic chemical vapor deposition is demonstrated. An extremely high two-dimensional electron gas concentration more than 1×1013 cm-2 with enhanced mobility of 2900 cm 2/V s is achieved. This type of structure can easily break through the doping limitation in conventional heterostructures while keeping a high mobility.
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U2 - 10.1063/1.109988
DO - 10.1063/1.109988
M3 - Article
VL - 63
SP - 509
EP - 511
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 4
ER -