Abstract
We report very low Vt [Ir-Hf]/HfLaO CMOS using novel self-aligned low-temperature ultra shallow junctions with gate-first process compatible with current VLSI. At 1.2 nm EOT, good φm-eff of 5.3 and 4.1 eV, low Vt of +0.05 and 0.03 V, high mobility of 90 and 243 cm2/Vs, and small 85°C BTI <32 mV (10 MV/cm, 1 hr) are measured for p- and n-MOS.
Original language | English |
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Article number | 4418939 |
Pages (from-to) | 333-336 |
Number of pages | 4 |
Journal | Technical Digest - International Electron Devices Meeting, IEDM |
DOIs | |
Publication status | Published - 2007 |
Event | 2007 IEEE International Electron Devices Meeting, IEDM - Washington, DC, United States Duration: 2007 Dec 10 → 2007 Dec 12 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry