Abstract
We present the observation of an effective real-space transfer process of hot electrons resulting in a very strong negative differential resistance in GaAs/In0.25Ga0.75As/GaAs pseudomorphic heterostructure by growing symmetrically double δ-doping layers on both sides of the InGaAs channel. By Hall measurements, the proposed structure shows carrier mobility as high as 4500 (14 100) cm2/V s at 300 (77) K which is suitable for high-frequency operations. Meanwhile, this structure with a 5×100 μm2 emitter channel reveals extremely sharp charge injection, broad current valley range (>3 V), high transconductance (over 23.5 S/mm), high current driving capability, and high peak-to-valley current ratio (up to 156 000). We also carried out secondary-ion mass spectrometry profiles to confirm the quality of the proposed structure.
| Original language | English |
|---|---|
| Number of pages | 1 |
| Journal | Applied Physics Letters |
| DOIs | |
| Publication status | Published - 1995 Dec 1 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
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Very strong negative differential resistance real-space transfer transistor using a multiple δ-doping GaAs/InGaAs pseudomorphic heterostructure. / Wu, C. L.; Hsu, Wei-Chou; Tsai, M. S.; Shieh, H. M.
In: Applied Physics Letters, 01.12.1995.Research output: Contribution to journal › Article
TY - JOUR
T1 - Very strong negative differential resistance real-space transfer transistor using a multiple δ-doping GaAs/InGaAs pseudomorphic heterostructure
AU - Wu, C. L.
AU - Hsu, Wei-Chou
AU - Tsai, M. S.
AU - Shieh, H. M.
PY - 1995/12/1
Y1 - 1995/12/1
N2 - We present the observation of an effective real-space transfer process of hot electrons resulting in a very strong negative differential resistance in GaAs/In0.25Ga0.75As/GaAs pseudomorphic heterostructure by growing symmetrically double δ-doping layers on both sides of the InGaAs channel. By Hall measurements, the proposed structure shows carrier mobility as high as 4500 (14 100) cm2/V s at 300 (77) K which is suitable for high-frequency operations. Meanwhile, this structure with a 5×100 μm2 emitter channel reveals extremely sharp charge injection, broad current valley range (>3 V), high transconductance (over 23.5 S/mm), high current driving capability, and high peak-to-valley current ratio (up to 156 000). We also carried out secondary-ion mass spectrometry profiles to confirm the quality of the proposed structure.
AB - We present the observation of an effective real-space transfer process of hot electrons resulting in a very strong negative differential resistance in GaAs/In0.25Ga0.75As/GaAs pseudomorphic heterostructure by growing symmetrically double δ-doping layers on both sides of the InGaAs channel. By Hall measurements, the proposed structure shows carrier mobility as high as 4500 (14 100) cm2/V s at 300 (77) K which is suitable for high-frequency operations. Meanwhile, this structure with a 5×100 μm2 emitter channel reveals extremely sharp charge injection, broad current valley range (>3 V), high transconductance (over 23.5 S/mm), high current driving capability, and high peak-to-valley current ratio (up to 156 000). We also carried out secondary-ion mass spectrometry profiles to confirm the quality of the proposed structure.
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U2 - 10.1063/1.114117
DO - 10.1063/1.114117
M3 - Article
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
ER -