Very strong negative differential resistance real-space transfer transistor using a multiple δ-doping GaAs/InGaAs pseudomorphic heterostructure

C. L. Wu, Wei-Chou Hsu, M. S. Tsai, H. M. Shieh

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Abstract

We present the observation of an effective real-space transfer process of hot electrons resulting in a very strong negative differential resistance in GaAs/In0.25Ga0.75As/GaAs pseudomorphic heterostructure by growing symmetrically double δ-doping layers on both sides of the InGaAs channel. By Hall measurements, the proposed structure shows carrier mobility as high as 4500 (14 100) cm2/V s at 300 (77) K which is suitable for high-frequency operations. Meanwhile, this structure with a 5×100 μm2 emitter channel reveals extremely sharp charge injection, broad current valley range (>3 V), high transconductance (over 23.5 S/mm), high current driving capability, and high peak-to-valley current ratio (up to 156 000). We also carried out secondary-ion mass spectrometry profiles to confirm the quality of the proposed structure.

Original languageEnglish
Number of pages1
JournalApplied Physics Letters
DOIs
Publication statusPublished - 1995 Dec 1

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valleys
transistors
transconductance
carrier mobility
hot electrons
secondary ion mass spectrometry
high current
emitters
injection
profiles

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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abstract = "We present the observation of an effective real-space transfer process of hot electrons resulting in a very strong negative differential resistance in GaAs/In0.25Ga0.75As/GaAs pseudomorphic heterostructure by growing symmetrically double δ-doping layers on both sides of the InGaAs channel. By Hall measurements, the proposed structure shows carrier mobility as high as 4500 (14 100) cm2/V s at 300 (77) K which is suitable for high-frequency operations. Meanwhile, this structure with a 5×100 μm2 emitter channel reveals extremely sharp charge injection, broad current valley range (>3 V), high transconductance (over 23.5 S/mm), high current driving capability, and high peak-to-valley current ratio (up to 156 000). We also carried out secondary-ion mass spectrometry profiles to confirm the quality of the proposed structure.",
author = "Wu, {C. L.} and Wei-Chou Hsu and Tsai, {M. S.} and Shieh, {H. M.}",
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T1 - Very strong negative differential resistance real-space transfer transistor using a multiple δ-doping GaAs/InGaAs pseudomorphic heterostructure

AU - Wu, C. L.

AU - Hsu, Wei-Chou

AU - Tsai, M. S.

AU - Shieh, H. M.

PY - 1995/12/1

Y1 - 1995/12/1

N2 - We present the observation of an effective real-space transfer process of hot electrons resulting in a very strong negative differential resistance in GaAs/In0.25Ga0.75As/GaAs pseudomorphic heterostructure by growing symmetrically double δ-doping layers on both sides of the InGaAs channel. By Hall measurements, the proposed structure shows carrier mobility as high as 4500 (14 100) cm2/V s at 300 (77) K which is suitable for high-frequency operations. Meanwhile, this structure with a 5×100 μm2 emitter channel reveals extremely sharp charge injection, broad current valley range (>3 V), high transconductance (over 23.5 S/mm), high current driving capability, and high peak-to-valley current ratio (up to 156 000). We also carried out secondary-ion mass spectrometry profiles to confirm the quality of the proposed structure.

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