Abstract
Internal reflection infrared spectroscopy was used for the first time to observe the vibrational spectrum of H atoms adsorbed on GaAs(100) surfaces grown by molecular beam epitaxy. Initial H atom exposure produces one peak at 2100 cm-1 due to an arsenic hydride species. With prolonged exposure, the 2100 cm-1 vibration disappears and a second one appears at 2140 cm-1 due to arsenic monohydride. Thus, for MBE-grown GaAs(100) only arsenic is accessible to the H atoms, and adsorption of H causes a change in the surface structure.
Original language | English |
---|---|
Pages (from-to) | L721-L724 |
Journal | Surface Science |
Volume | 204 |
Issue number | 1-2 |
DOIs | |
Publication status | Published - 1988 Oct 1 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry