Internal reflection infrared spectroscopy was used for the first time to observe the vibrational spectrum of H atoms adsorbed on GaAs(100) surfaces grown by molecular beam epitaxy. Initial H atom exposure produces one peak at 2100 cm-1 due to an arsenic hydride species. With prolonged exposure, the 2100 cm-1 vibration disappears and a second one appears at 2140 cm-1 due to arsenic monohydride. Thus, for MBE-grown GaAs(100) only arsenic is accessible to the H atoms, and adsorption of H causes a change in the surface structure.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry