Visible-blind GaN p-i-n photodiodes with an Al0.12Ga0.88N/GaN superlattice structure

L. S. Yeh, M. L. Lee, J. K. Sheu, M. G. Chen, C. J. Kao, G. C. Chi, S. J. Chang, Y. K. Su

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20 Citations (Scopus)

Abstract

GaN ultraviolet photodiodes with (i.e. sample 1) and without (i.e. sample 2) Mg-doped AlGaN/GaN strained-layer superlattice structure were both fabricated. It was found that we could achieve a near constant dark current of around 3 and 7 nA/cm2 for sample 1 and sample 2, respectively. It was also found that we could achieve a larger photocurrent and a larger photocurrent to dark current contrast ratio from sample 1. The zero-bias peak responsivity was found to be around 0.05 A/W at 356 nm and 0.006 A/W at 363 nm for sample 1 and sample 2, respectively. However, the transient response full-width-half-maximum (FWHM) of sample 1 was found to be longer. For devices with a 500 μm diameter, it was found that the transient response FWHM was 0.6 μs for sample 1 and 0.2 μs for sample 2. The difference in response time between sample 1 and sample 2 should be attributed to the distribution of depletion layer in between the p-layer and the n-type i-layer.

Original languageEnglish
Pages (from-to)873-878
Number of pages6
JournalSolid-State Electronics
Volume47
Issue number5
DOIs
Publication statusPublished - 2003 May

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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