Visible luminescence properties of (Ga1-xZnx)(N 1-xOx) solid solution (x 0.22)

Yueh Chien Lee, Tai Yuan Lin, Chih Wen Wu, Hsisheng Teng, Che Chia Hu, Sheng Yao Hu, Min De Yang

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Abstract

Temperature-dependent photoluminescence (PL) and time-resolved photoluminescence (TRPL) are measured for the (Ga1-xZn x)(N1-xOx) solid solution with x = 0.22 to study its luminescence properties. PL result shows that the material exhibits visible luminescence at around 1.87 eV (663 nm) with a broad emission band even at room temperature. The origin of luminescence mechanism can be attributed to the radiative recombination of the electrons bound to donors and the holes bound to acceptors. The investigation from the integrated PL intensity and TRPL as a function of temperature indicates that the activation energy for thermalizing the electrons bound to a donor dominates the luminescence behavior in the (Ga1-xZnx)(N1-xOx) solid solution.

Original languageEnglish
Article number073506
JournalJournal of Applied Physics
Volume109
Issue number7
DOIs
Publication statusPublished - 2011 Apr 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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    Lee, Y. C., Lin, T. Y., Wu, C. W., Teng, H., Hu, C. C., Hu, S. Y., & Yang, M. D. (2011). Visible luminescence properties of (Ga1-xZnx)(N 1-xOx) solid solution (x 0.22). Journal of Applied Physics, 109(7), [073506]. https://doi.org/10.1063/1.3562163