Voltage-controlled magnetic anisotropy in spintronic devices

Pedram Khalili Amiri, Kang L. Wang

Research output: Contribution to journalArticlepeer-review


Electric-field-control of magnetism can dramatically improve the energy efficiency of spintronic devices and enhance the performance of magnetic memories. More generally, it expands the range of applications of nonvolatile spintronic devices, by making them energetically competitive compared to conventional semiconductor solutions for logic and computation, thereby potentially enabling a new generation of ultralow-power nonvolatile spintronic systems. This paper reviews recent experiments on the voltage-controlled magnetic anisotropy (VCMA) effect in thin magnetic films, and their device implications. The interfacial perpendicular anisotropy in layered magnetic material stacks, as well as its modulation by voltage, are discussed. Ferromagnetic resonance experiments and VCMA-induced high-frequency magnetization dynamics are reviewed. Finally, we discuss recent progress on voltage-induced switching of magnetic tunnel junction devices and its potential applications to magnetic random access memory (MRAM).

Original languageEnglish
Article number1240002
Issue number3
Publication statusPublished - 2012 Sep 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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