Voltage-Controlled Magnetic Tunnel Junctions for Processing-In-Memory Implementation

Lezhi Wang, Wang Kang, Farbod Ebrahimi, Xiang Li, Yangqi Huang, Chao Zhao, Kang L. Wang, Weisheng Zhao

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)

Abstract

The processing-in-memory (PIM) paradigm has been considered as a promising alternative to break the bottlenecks of conventional von-Neumann architecture by realizing the unity of data storage and processing in the same die. On the road toward implementing such an architecture, finding a novel memory that can support both dense data storage and efficient logic processing is the critical step. In this letter, we report a voltage-controlled magnetic tunnel junction (MTJ), which is a potential candidate for PIM implementation. Stateful Boolean logic functions can be realized with a single device through the memory-like write/read operations. The device was fabricated and characterized at room temperature. Afterwards, typical Boolean logic operations, e.g., "OR", "AND", and "NXOR", were experimentally demonstrated with the fabricated MTJ device. The proposed approach opens up a new way for PIM implementation in spintronic memories.

Original languageEnglish
Pages (from-to)440-443
Number of pages4
JournalIEEE Electron Device Letters
Volume39
Issue number3
DOIs
Publication statusPublished - 2018 Mar

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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