Voltage-controlled three terminal GaAs negative differential resistance device using n + -i-p + -i-n + structure

K. F. Yarn, Yeong-Her Wang, C. Y. Chang, C. S. Chang

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A novel three terminal GaAs n+-i-p+-i-n+ negative differential resistance device prepared by molecular beam epitaxy is demonstrated for the first time. The peak-to-valley current ratios can be modulated by the third external applied voltage which can be expressed as Ip/Iv = 5.08 × 10-3 exp [1.999VBE] at room temperature, where VBE is in units of volts. It implies that large peak-to-valley current ratios (e.g. Ip/Iv = 300 at VBE = 5.5 V) and large peak current densities can easily be obtained just by increasing the VBE bias. A phenomenological bipolar-unipolar transition model is proposed to interpret the observed behavior and confirmed by experiments.

Original languageEnglish
Pages (from-to)219-224
Number of pages6
JournalIEE proceedings. Part G. Electronic circuits and systems
Volume137
Issue number3
Publication statusPublished - 1990 Jun 1

Fingerprint

Molecular beam epitaxy
Current density
Electric potential
Experiments
Temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

@article{7e785285ef614f9abda67c8685cbffec,
title = "Voltage-controlled three terminal GaAs negative differential resistance device using n + -i-p + -i-n + structure",
abstract = "A novel three terminal GaAs n+-i-p+-i-n+ negative differential resistance device prepared by molecular beam epitaxy is demonstrated for the first time. The peak-to-valley current ratios can be modulated by the third external applied voltage which can be expressed as Ip/Iv = 5.08 × 10-3 exp [1.999VBE] at room temperature, where VBE is in units of volts. It implies that large peak-to-valley current ratios (e.g. Ip/Iv = 300 at VBE = 5.5 V) and large peak current densities can easily be obtained just by increasing the VBE bias. A phenomenological bipolar-unipolar transition model is proposed to interpret the observed behavior and confirmed by experiments.",
author = "Yarn, {K. F.} and Yeong-Her Wang and Chang, {C. Y.} and Chang, {C. S.}",
year = "1990",
month = "6",
day = "1",
language = "English",
volume = "137",
pages = "219--224",
journal = "IEE Proceedings, Part G: Electronic Circuits and Systems",
issn = "0143-7089",
publisher = "Institute of Electrical Engineers",
number = "3",

}

Voltage-controlled three terminal GaAs negative differential resistance device using n + -i-p + -i-n + structure. / Yarn, K. F.; Wang, Yeong-Her; Chang, C. Y.; Chang, C. S.

In: IEE proceedings. Part G. Electronic circuits and systems, Vol. 137, No. 3, 01.06.1990, p. 219-224.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Voltage-controlled three terminal GaAs negative differential resistance device using n + -i-p + -i-n + structure

AU - Yarn, K. F.

AU - Wang, Yeong-Her

AU - Chang, C. Y.

AU - Chang, C. S.

PY - 1990/6/1

Y1 - 1990/6/1

N2 - A novel three terminal GaAs n+-i-p+-i-n+ negative differential resistance device prepared by molecular beam epitaxy is demonstrated for the first time. The peak-to-valley current ratios can be modulated by the third external applied voltage which can be expressed as Ip/Iv = 5.08 × 10-3 exp [1.999VBE] at room temperature, where VBE is in units of volts. It implies that large peak-to-valley current ratios (e.g. Ip/Iv = 300 at VBE = 5.5 V) and large peak current densities can easily be obtained just by increasing the VBE bias. A phenomenological bipolar-unipolar transition model is proposed to interpret the observed behavior and confirmed by experiments.

AB - A novel three terminal GaAs n+-i-p+-i-n+ negative differential resistance device prepared by molecular beam epitaxy is demonstrated for the first time. The peak-to-valley current ratios can be modulated by the third external applied voltage which can be expressed as Ip/Iv = 5.08 × 10-3 exp [1.999VBE] at room temperature, where VBE is in units of volts. It implies that large peak-to-valley current ratios (e.g. Ip/Iv = 300 at VBE = 5.5 V) and large peak current densities can easily be obtained just by increasing the VBE bias. A phenomenological bipolar-unipolar transition model is proposed to interpret the observed behavior and confirmed by experiments.

UR - http://www.scopus.com/inward/record.url?scp=0025441652&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025441652&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0025441652

VL - 137

SP - 219

EP - 224

JO - IEE Proceedings, Part G: Electronic Circuits and Systems

JF - IEE Proceedings, Part G: Electronic Circuits and Systems

SN - 0143-7089

IS - 3

ER -