A novel three terminal GaAs n+-i-p+-i-n+ negative differential resistance device prepared by molecular beam epitaxy is demonstrated for the first time. The peak-to-valley current ratios can be modulated by the third external applied voltage which can be expressed as Ip/Iv = 5.08 × 10-3 exp [1.999VBE] at room temperature, where VBE is in units of volts. It implies that large peak-to-valley current ratios (e.g. Ip/Iv = 300 at VBE = 5.5 V) and large peak current densities can easily be obtained just by increasing the VBE bias. A phenomenological bipolar-unipolar transition model is proposed to interpret the observed behavior and confirmed by experiments.
|Number of pages||6|
|Journal||IEE proceedings. Part G. Electronic circuits and systems|
|Publication status||Published - 1990|
All Science Journal Classification (ASJC) codes