Voltage-controlled three terminal GaAs negative differential resistance device using n + -i-p + -i-n + structure

K. F. Yarn, Y. H. Wang, C. Y. Chang, C. S. Chang

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

A novel three terminal GaAs n+-i-p+-i-n+ negative differential resistance device prepared by molecular beam epitaxy is demonstrated for the first time. The peak-to-valley current ratios can be modulated by the third external applied voltage which can be expressed as Ip/Iv = 5.08 × 10-3 exp [1.999VBE] at room temperature, where VBE is in units of volts. It implies that large peak-to-valley current ratios (e.g. Ip/Iv = 300 at VBE = 5.5 V) and large peak current densities can easily be obtained just by increasing the VBE bias. A phenomenological bipolar-unipolar transition model is proposed to interpret the observed behavior and confirmed by experiments.

Original languageEnglish
Pages (from-to)219-224
Number of pages6
JournalIEE proceedings. Part G. Electronic circuits and systems
Volume137
Issue number3
DOIs
Publication statusPublished - 1990

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Fingerprint Dive into the research topics of 'Voltage-controlled three terminal GaAs negative differential resistance device using n <sup>+</sup> -i-p <sup>+</sup> -i-n <sup>+</sup> structure'. Together they form a unique fingerprint.

Cite this