Voltage-induced ferromagnetic resonance in magnetic tunnel junctions

Jian Zhu; J. A. Katine; Graham E. Rowlands; Yu Jin Chen; Zheng Duan; Juan G. Alzate; Pramey Upadhyaya; Juergen Langer; Pedram Khalili Amiri; Kang L. Wang; Ilya N. Krivorotov

doi:10.1103/PhysRevLett.108.197203

Voltage-induced ferromagnetic resonance in magnetic tunnel junctions

Jian Zhu, J. A. Katine, Graham E. Rowlands, Yu Jin Chen, Zheng Duan, Juan G. Alzate, Pramey Upadhyaya, Juergen Langer, Pedram Khalili Amiri, Kang L. Wang, Ilya N. Krivorotov

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

196 Citations (Scopus)

Abstract

We demonstrate excitation of ferromagnetic resonance in CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) by the combined action of voltage-controlled magnetic anisotropy (VCMA) and spin transfer torque (ST). Our measurements reveal that GHz-frequency VCMA torque and ST in low-resistance MTJs have similar magnitudes, and thus that both torques are equally important for understanding high-frequency voltage-driven magnetization dynamics in MTJs. As an example, we show that VCMA can increase the sensitivity of an MTJ-based microwave signal detector to the sensitivity level of semiconductor Schottky diodes.

Original language	English
Article number	197203
Journal	Physical review letters
Volume	108
Issue number	19
DOIs	https://doi.org/10.1103/PhysRevLett.108.197203
Publication status	Published - 2012 May 9

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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10.1103/PhysRevLett.108.197203

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title = "Voltage-induced ferromagnetic resonance in magnetic tunnel junctions",

abstract = "We demonstrate excitation of ferromagnetic resonance in CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) by the combined action of voltage-controlled magnetic anisotropy (VCMA) and spin transfer torque (ST). Our measurements reveal that GHz-frequency VCMA torque and ST in low-resistance MTJs have similar magnitudes, and thus that both torques are equally important for understanding high-frequency voltage-driven magnetization dynamics in MTJs. As an example, we show that VCMA can increase the sensitivity of an MTJ-based microwave signal detector to the sensitivity level of semiconductor Schottky diodes.",

author = "Jian Zhu and Katine, {J. A.} and Rowlands, {Graham E.} and Chen, {Yu Jin} and Zheng Duan and Alzate, {Juan G.} and Pramey Upadhyaya and Juergen Langer and Amiri, {Pedram Khalili} and Wang, {Kang L.} and Krivorotov, {Ilya N.}",

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doi = "10.1103/PhysRevLett.108.197203",

language = "English",

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journal = "Physical Review Letters",

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Voltage-induced ferromagnetic resonance in magnetic tunnel junctions. / Zhu, Jian; Katine, J. A.; Rowlands, Graham E.; Chen, Yu Jin; Duan, Zheng; Alzate, Juan G.; Upadhyaya, Pramey; Langer, Juergen; Amiri, Pedram Khalili; Wang, Kang L.; Krivorotov, Ilya N.

In: Physical review letters, Vol. 108, No. 19, 197203, 09.05.2012.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Voltage-induced ferromagnetic resonance in magnetic tunnel junctions

AU - Zhu, Jian

AU - Katine, J. A.

AU - Rowlands, Graham E.

AU - Chen, Yu Jin

AU - Duan, Zheng

AU - Alzate, Juan G.

AU - Upadhyaya, Pramey

AU - Langer, Juergen

AU - Amiri, Pedram Khalili

AU - Wang, Kang L.

AU - Krivorotov, Ilya N.

PY - 2012/5/9

Y1 - 2012/5/9

N2 - We demonstrate excitation of ferromagnetic resonance in CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) by the combined action of voltage-controlled magnetic anisotropy (VCMA) and spin transfer torque (ST). Our measurements reveal that GHz-frequency VCMA torque and ST in low-resistance MTJs have similar magnitudes, and thus that both torques are equally important for understanding high-frequency voltage-driven magnetization dynamics in MTJs. As an example, we show that VCMA can increase the sensitivity of an MTJ-based microwave signal detector to the sensitivity level of semiconductor Schottky diodes.

AB - We demonstrate excitation of ferromagnetic resonance in CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) by the combined action of voltage-controlled magnetic anisotropy (VCMA) and spin transfer torque (ST). Our measurements reveal that GHz-frequency VCMA torque and ST in low-resistance MTJs have similar magnitudes, and thus that both torques are equally important for understanding high-frequency voltage-driven magnetization dynamics in MTJs. As an example, we show that VCMA can increase the sensitivity of an MTJ-based microwave signal detector to the sensitivity level of semiconductor Schottky diodes.

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Voltage-induced ferromagnetic resonance in magnetic tunnel junctions

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