Voltage-induced ferromagnetic resonance in magnetic tunnel junctions

Jian Zhu, J. A. Katine, Graham E. Rowlands, Yu Jin Chen, Zheng Duan, Juan G. Alzate, Pramey Upadhyaya, Juergen Langer, Pedram Khalili Amiri, Kang L. Wang, Ilya N. Krivorotov

Research output: Contribution to journalArticlepeer-review

196 Citations (Scopus)


We demonstrate excitation of ferromagnetic resonance in CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) by the combined action of voltage-controlled magnetic anisotropy (VCMA) and spin transfer torque (ST). Our measurements reveal that GHz-frequency VCMA torque and ST in low-resistance MTJs have similar magnitudes, and thus that both torques are equally important for understanding high-frequency voltage-driven magnetization dynamics in MTJs. As an example, we show that VCMA can increase the sensitivity of an MTJ-based microwave signal detector to the sensitivity level of semiconductor Schottky diodes.

Original languageEnglish
Article number197203
JournalPhysical review letters
Issue number19
Publication statusPublished - 2012 May 9

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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