Voltage-induced switching of nanoscale magnetic tunnel junctions

J. G. Alzate, P. Khalili Amiri, P. Upadhyaya, S. S. Cherepov, J. Zhu, M. Lewis, R. Dorrance, J. A. Katine, J. Langer, K. Galatsis, D. Markovic, I. Krivorotov, K. L. Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

55 Citations (Scopus)

Abstract

We demonstrate voltage-induced (non-STT) switching of nanoscale, high resistance voltage-controlled magnetic tunnel junctions (VMTJs) with pulses down to 10 ns. We show ∼10x reduction in switching energies (compared to STT) with leakage currents < 105 A/cm2. Switching dynamics, from quasi-static to the nanosecond regime, are studied in detail. Finally, a strategy for eliminating the need for external magnetic-fields, where switching is performed by set/reset voltages of different amplitudes but same polarity, is proposed and verified experimentally.

Original languageEnglish
Title of host publication2012 IEEE International Electron Devices Meeting, IEDM 2012
Pages29.5.1-29.5.4
DOIs
Publication statusPublished - 2012
Event2012 IEEE International Electron Devices Meeting, IEDM 2012 - San Francisco, CA, United States
Duration: 2012 Dec 102012 Dec 13

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Conference

Conference2012 IEEE International Electron Devices Meeting, IEDM 2012
Country/TerritoryUnited States
CitySan Francisco, CA
Period12-12-1012-12-13

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint

Dive into the research topics of 'Voltage-induced switching of nanoscale magnetic tunnel junctions'. Together they form a unique fingerprint.

Cite this