TY - GEN
T1 - VUV/O3 assisted single crystal quartz bonding with amorphous SiO2 intermedicate layer for manufacturing optical low pass filter
AU - Ma, Bo
AU - Kuwae, Hiroyuki
AU - Okada, Akiko
AU - Fu, Weixin
AU - Shoji, Shuichi
AU - Mizuno, Jun
N1 - Publisher Copyright:
© 2016 The Japan Institute of Electronics Packaging.
PY - 2016/6/7
Y1 - 2016/6/7
N2 - We proposed a single crystal quartz direct bonding method utilizing amorphous SiO2 intermediated layers, which can improve heat resistance of the optical low pass filter (OLPF) by novel fabrication method. An amorphous SiO2 was deposited on the opposite sides of both infrared reflection and anti-reflection coated substrates to prepare the highly activated surfaces. The substrates were bonded at 200 °C after the vacuum ultraviolet (VUV) /O3 pre-treatment. The bonded sample with amorphous SiO2 layer shows 5 times higher tensile strength than that without amorphous SiO2 layer while it keeps nearly 100% of light transmittance. These results indicate that amorphous SiO2 layer could prepare activate surface even in low vacuum bonding condition. This single crystal bonding method will be useful for realizing high performance OLPFs.
AB - We proposed a single crystal quartz direct bonding method utilizing amorphous SiO2 intermediated layers, which can improve heat resistance of the optical low pass filter (OLPF) by novel fabrication method. An amorphous SiO2 was deposited on the opposite sides of both infrared reflection and anti-reflection coated substrates to prepare the highly activated surfaces. The substrates were bonded at 200 °C after the vacuum ultraviolet (VUV) /O3 pre-treatment. The bonded sample with amorphous SiO2 layer shows 5 times higher tensile strength than that without amorphous SiO2 layer while it keeps nearly 100% of light transmittance. These results indicate that amorphous SiO2 layer could prepare activate surface even in low vacuum bonding condition. This single crystal bonding method will be useful for realizing high performance OLPFs.
UR - http://www.scopus.com/inward/record.url?scp=84978209159&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84978209159&partnerID=8YFLogxK
U2 - 10.1109/ICEP.2016.7486866
DO - 10.1109/ICEP.2016.7486866
M3 - Conference contribution
AN - SCOPUS:84978209159
T3 - 2016 International Conference on Electronics Packaging, ICEP 2016
SP - 447
EP - 450
BT - 2016 International Conference on Electronics Packaging, ICEP 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2016 International Conference on Electronics Packaging, ICEP 2016
Y2 - 20 April 2016 through 22 April 2016
ER -