Wafer size MOS2 with few monolayer synthesized by H2S sulfurization

Yen Teng Ho, Yung Ching Chu, Lin Lung Wei, Tien Tung Luong, Chih-Chien Lin, Chun Hung Cheng, Hung Ru Hsu, Yung Yi Tu, Edward Yi Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Wafer sized, high quality continuous films would be a key demand for MoS2 implemented in circuit application. In this study, the growth of few monolayer MoS2 on 4 inches SiO2/Si substrate were demonstrated. The MoS2 thin films were synthesized by sulfurized in a furnace from the ultra-thin MoO3 starting materials by using H2S. The obtained MoS2 thin film examined by Raman analysis and Photoluminescence (PL), shows the semiconductor nature with direct transition peaks of 1.86 eV and 1.99 eV. The 4∼5 monolayer of MoS2 with thickness around 2.6 nm is confirmed by cross-sectional view of transmission electron microscopy (TEM). Additionally, the DC characteristics of MoS2 MOSFETs exhibit at least 2 order in on/off current ratio, demonstrating the feasibility for circuit application.

Original languageEnglish
Title of host publicationChina Semiconductor Technology International Conference 2017, CSTIC 2017
EditorsSteve Liang, Ying Shi, Ru Huang, Qinghuang Lin, David Huang, Hanming Wu, Yuchun Wang, Cor Claeys, Kafai Lai, Ying Zhang, Peilin Song, Viyu Shi, Zhen Guo
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509066940
DOIs
Publication statusPublished - 2017 May 4
Event2017 China Semiconductor Technology International Conference, CSTIC 2017 - Shanghai, China
Duration: 2017 Mar 122017 Mar 13

Publication series

NameChina Semiconductor Technology International Conference 2017, CSTIC 2017

Conference

Conference2017 China Semiconductor Technology International Conference, CSTIC 2017
CountryChina
CityShanghai
Period17-03-1217-03-13

All Science Journal Classification (ASJC) codes

  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials

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