Warm-white light-emitting diode with high color rendering index fabricated by combining trichromatic InGaN emitter with single red phosphor

Jinn Kong Sheu, Fu Bang Chen, Yen Chin Wang, Chih Chiang Chang, Shih Hsien Huang, Chun Nan Liu, Ming Lun Lee

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

We present a trichromatic GaN-based light-emitting diode (LED) that emits near-ultraviolet (n-UV) blue and green peaks combined with red phosphor to generate white light with a low correlated color temperature (CCT) and high color rendering index (CRI). The LED structure, blue and green unipolar InGaN/GaN multiple quantum wells (MQWs) stacked with a top p-i-n structure containing an InGaN/GaN MQW emitting n-UV light, was grown epitaxially on a single substrate. The trichromatic LED chips feature a vertical conduction structure on a silicon substrate fabricated through wafer bonding and laser lift-off techniques. The blue and green InGaN/GaN MQWs were pumped with n-UV light to re-emit low-energy photons when the LEDs were electrically driven with a forward current. The emission spectrum included three peaks at approximately 405, 468, and 537 nm. Furthermore, the trichromatic LED chips were combined with red phosphor to generate white light with a CCT and CRI of approximately 2900 and 92, respectively.

Original languageEnglish
Pages (from-to)A232-A239
JournalOptics Express
Volume23
Issue number7
DOIs
Publication statusPublished - 2015 Apr 6

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

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