TY - GEN
T1 - Waveguide-Fed SiGe Avalanche pin Photodetector Grown on SOI Substrate with 0.2A/W External Responsivity at 1.3μm
AU - Yoshimoto, T.
AU - Thomas, S.
AU - Wang, K. L.
AU - Jalali, B.
N1 - Funding Information:
Acknowledgements The authors would like to acknowledge Dr. F. Coppinger and Dr. F. Huang for useful discussion. Help from Mr. A. Kane and Mr. S.Yegnanarayanan for device fabrication process is also acknowledge. This work was supported by DARPA.
Publisher Copyright:
© 1998 OSA/IPR 1998.
PY - 1998
Y1 - 1998
N2 - We demonstrate a SiGe avalanche photodetector grown on a silicon-oninsulator(SOI) passive waveguide. The thick SOI waveguide couples the light from an optical fiber into the SiGe detector with strain-limited thin absorption region. The detector exhibits low dark current, sharp breakdown and an external responsivity of 0.2A/W at 1.3μm.
AB - We demonstrate a SiGe avalanche photodetector grown on a silicon-oninsulator(SOI) passive waveguide. The thick SOI waveguide couples the light from an optical fiber into the SiGe detector with strain-limited thin absorption region. The detector exhibits low dark current, sharp breakdown and an external responsivity of 0.2A/W at 1.3μm.
UR - https://www.scopus.com/pages/publications/84865900429
UR - https://www.scopus.com/pages/publications/84865900429#tab=citedBy
M3 - Conference contribution
AN - SCOPUS:84865900429
T3 - Optics InfoBase Conference Papers
SP - 285
EP - 288
BT - Integrated Photonics Research, IPR 1998
PB - Optica Publishing Group (formerly OSA)
T2 - Integrated Photonics Research, IPR 1998
Y2 - 30 March 1998
ER -