Abstract
Wavelength and temperature-dependent characteristics of silicon reach-through avalanche photodiodes (RAPD) are studied using the modified Baraff's theory. The temperature and wavelength regions discussed are 100-500 K and 0.655-1.06 μm, respectively, for Si photodetectors. The effects of breakdown voltage, depletion region width, and efficiency on the avalanche region width are widely studied. Both n+ (front)side and p+ (back) side illumination are also considered. The noise equivalent power is significantly reduced with light incident on the p+ surface with little sacrifice of efficiency. An RAPD structure is proposed in which the direction of radiation incidence causes photogeneration to precede avalanche multiplication reducing the multiplication noise substantially. This result should be useful in the design of RAPD laser detectors.
| Original language | English |
|---|---|
| Pages (from-to) | 4255-4258 |
| Number of pages | 4 |
| Journal | Applied optics |
| Volume | 20 |
| Issue number | 24 |
| DOIs | |
| Publication status | Published - 1981 Dec 15 |
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All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics
- Engineering (miscellaneous)
- Electrical and Electronic Engineering
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Wavelength and temperature dependence of RAPD laser detectors. / Su, Y. K.; Chang, C. Y.; Wu, T. S.; Houng, M. P.; Wang, Y. H.
In: Applied optics, Vol. 20, No. 24, 15.12.1981, p. 4255-4258.Research output: Contribution to journal › Article
TY - JOUR
T1 - Wavelength and temperature dependence of RAPD laser detectors
AU - Su, Y. K.
AU - Chang, C. Y.
AU - Wu, T. S.
AU - Houng, M. P.
AU - Wang, Y. H.
PY - 1981/12/15
Y1 - 1981/12/15
N2 - Wavelength and temperature-dependent characteristics of silicon reach-through avalanche photodiodes (RAPD) are studied using the modified Baraff's theory. The temperature and wavelength regions discussed are 100-500 K and 0.655-1.06 μm, respectively, for Si photodetectors. The effects of breakdown voltage, depletion region width, and efficiency on the avalanche region width are widely studied. Both n+ (front)side and p+ (back) side illumination are also considered. The noise equivalent power is significantly reduced with light incident on the p+ surface with little sacrifice of efficiency. An RAPD structure is proposed in which the direction of radiation incidence causes photogeneration to precede avalanche multiplication reducing the multiplication noise substantially. This result should be useful in the design of RAPD laser detectors.
AB - Wavelength and temperature-dependent characteristics of silicon reach-through avalanche photodiodes (RAPD) are studied using the modified Baraff's theory. The temperature and wavelength regions discussed are 100-500 K and 0.655-1.06 μm, respectively, for Si photodetectors. The effects of breakdown voltage, depletion region width, and efficiency on the avalanche region width are widely studied. Both n+ (front)side and p+ (back) side illumination are also considered. The noise equivalent power is significantly reduced with light incident on the p+ surface with little sacrifice of efficiency. An RAPD structure is proposed in which the direction of radiation incidence causes photogeneration to precede avalanche multiplication reducing the multiplication noise substantially. This result should be useful in the design of RAPD laser detectors.
UR - http://www.scopus.com/inward/record.url?scp=0019698725&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0019698725&partnerID=8YFLogxK
U2 - 10.1364/AO.20.004255
DO - 10.1364/AO.20.004255
M3 - Article
AN - SCOPUS:0019698725
VL - 20
SP - 4255
EP - 4258
JO - Applied Optics
JF - Applied Optics
SN - 1559-128X
IS - 24
ER -