Wavelength and temperature dependence of RAPD laser detectors

Y. K. Su, C. Y. Chang, T. S. Wu, M. P. Houng, Y. H. Wang

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Wavelength and temperature-dependent characteristics of silicon reach-through avalanche photodiodes (RAPD) are studied using the modified Baraff's theory. The temperature and wavelength regions discussed are 100-500 K and 0.655-1.06 μm, respectively, for Si photodetectors. The effects of breakdown voltage, depletion region width, and efficiency on the avalanche region width are widely studied. Both n+ (front)side and p+ (back) side illumination are also considered. The noise equivalent power is significantly reduced with light incident on the p+ surface with little sacrifice of efficiency. An RAPD structure is proposed in which the direction of radiation incidence causes photogeneration to precede avalanche multiplication reducing the multiplication noise substantially. This result should be useful in the design of RAPD laser detectors.

Original languageEnglish
Pages (from-to)4255-4258
Number of pages4
JournalApplied optics
Volume20
Issue number24
DOIs
Publication statusPublished - 1981 Dec 15

Fingerprint

Avalanche photodiodes
avalanches
photodiodes
Detectors
Wavelength
temperature dependence
Lasers
detectors
wavelengths
lasers
multiplication
Photodetectors
Electric breakdown
Temperature
Lighting
Radiation
Silicon
electrical faults
photometers
depletion

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Engineering (miscellaneous)
  • Electrical and Electronic Engineering

Cite this

Su, Y. K. ; Chang, C. Y. ; Wu, T. S. ; Houng, M. P. ; Wang, Y. H. / Wavelength and temperature dependence of RAPD laser detectors. In: Applied optics. 1981 ; Vol. 20, No. 24. pp. 4255-4258.
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Wavelength and temperature dependence of RAPD laser detectors. / Su, Y. K.; Chang, C. Y.; Wu, T. S.; Houng, M. P.; Wang, Y. H.

In: Applied optics, Vol. 20, No. 24, 15.12.1981, p. 4255-4258.

Research output: Contribution to journalArticle

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T1 - Wavelength and temperature dependence of RAPD laser detectors

AU - Su, Y. K.

AU - Chang, C. Y.

AU - Wu, T. S.

AU - Houng, M. P.

AU - Wang, Y. H.

PY - 1981/12/15

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AB - Wavelength and temperature-dependent characteristics of silicon reach-through avalanche photodiodes (RAPD) are studied using the modified Baraff's theory. The temperature and wavelength regions discussed are 100-500 K and 0.655-1.06 μm, respectively, for Si photodetectors. The effects of breakdown voltage, depletion region width, and efficiency on the avalanche region width are widely studied. Both n+ (front)side and p+ (back) side illumination are also considered. The noise equivalent power is significantly reduced with light incident on the p+ surface with little sacrifice of efficiency. An RAPD structure is proposed in which the direction of radiation incidence causes photogeneration to precede avalanche multiplication reducing the multiplication noise substantially. This result should be useful in the design of RAPD laser detectors.

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