Wavelength and temperature dependence of RAPD laser detectors

Y. K. Su; C. Y. Chang; T. S. Wu; M. P. Houng; Y. H. Wang

doi:10.1364/AO.20.004255

Wavelength and temperature dependence of RAPD laser detectors

Y. K. Su, C. Y. Chang, T. S. Wu, M. P. Houng, Y. H. Wang

Research output: Contribution to journal › Article › peer-review

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Abstract

Wavelength and temperature-dependent characteristics of silicon reach-through avalanche photodiodes (RAPD) are studied using the modified Baraff's theory. The temperature and wavelength regions discussed are 100-500 K and 0.655-1.06 μm, respectively, for Si photodetectors. The effects of breakdown voltage, depletion region width, and efficiency on the avalanche region width are widely studied. Both n⁺ (front)side and p⁺ (back) side illumination are also considered. The noise equivalent power is significantly reduced with light incident on the p⁺ surface with little sacrifice of efficiency. An RAPD structure is proposed in which the direction of radiation incidence causes photogeneration to precede avalanche multiplication reducing the multiplication noise substantially. This result should be useful in the design of RAPD laser detectors.

Original language	English
Pages (from-to)	4255-4258
Number of pages	4
Journal	Applied optics
Volume	20
Issue number	24
DOIs	https://doi.org/10.1364/AO.20.004255
Publication status	Published - 1981 Dec 15

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Engineering (miscellaneous)
Electrical and Electronic Engineering

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title = "Wavelength and temperature dependence of RAPD laser detectors",

abstract = "Wavelength and temperature-dependent characteristics of silicon reach-through avalanche photodiodes (RAPD) are studied using the modified Baraff's theory. The temperature and wavelength regions discussed are 100-500 K and 0.655-1.06 μm, respectively, for Si photodetectors. The effects of breakdown voltage, depletion region width, and efficiency on the avalanche region width are widely studied. Both n+ (front)side and p+ (back) side illumination are also considered. The noise equivalent power is significantly reduced with light incident on the p+ surface with little sacrifice of efficiency. An RAPD structure is proposed in which the direction of radiation incidence causes photogeneration to precede avalanche multiplication reducing the multiplication noise substantially. This result should be useful in the design of RAPD laser detectors.",

author = "Su, {Y. K.} and Chang, {C. Y.} and Wu, {T. S.} and Houng, {M. P.} and Wang, {Y. H.}",

year = "1981",

month = dec,

day = "15",

doi = "10.1364/AO.20.004255",

language = "English",

volume = "20",

pages = "4255--4258",

journal = "Applied Optics",

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TY - JOUR

T1 - Wavelength and temperature dependence of RAPD laser detectors

AU - Su, Y. K.

AU - Chang, C. Y.

AU - Wu, T. S.

AU - Houng, M. P.

AU - Wang, Y. H.

PY - 1981/12/15

Y1 - 1981/12/15

N2 - Wavelength and temperature-dependent characteristics of silicon reach-through avalanche photodiodes (RAPD) are studied using the modified Baraff's theory. The temperature and wavelength regions discussed are 100-500 K and 0.655-1.06 μm, respectively, for Si photodetectors. The effects of breakdown voltage, depletion region width, and efficiency on the avalanche region width are widely studied. Both n+ (front)side and p+ (back) side illumination are also considered. The noise equivalent power is significantly reduced with light incident on the p+ surface with little sacrifice of efficiency. An RAPD structure is proposed in which the direction of radiation incidence causes photogeneration to precede avalanche multiplication reducing the multiplication noise substantially. This result should be useful in the design of RAPD laser detectors.

AB - Wavelength and temperature-dependent characteristics of silicon reach-through avalanche photodiodes (RAPD) are studied using the modified Baraff's theory. The temperature and wavelength regions discussed are 100-500 K and 0.655-1.06 μm, respectively, for Si photodetectors. The effects of breakdown voltage, depletion region width, and efficiency on the avalanche region width are widely studied. Both n+ (front)side and p+ (back) side illumination are also considered. The noise equivalent power is significantly reduced with light incident on the p+ surface with little sacrifice of efficiency. An RAPD structure is proposed in which the direction of radiation incidence causes photogeneration to precede avalanche multiplication reducing the multiplication noise substantially. This result should be useful in the design of RAPD laser detectors.

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JO - Applied Optics

JF - Applied Optics

SN - 1559-128X

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Wavelength and temperature dependence of RAPD laser detectors

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