Well-aligned, vertically Al-doped ZnO nanowires synthesized on ZnO:Ga/glass templates

Cheng Liang Hsu; Shoou Jinn Chang; Hui Chuan Hung; Yan Ru Lin; Chorng Jye Huang; Yung Kuan Tseng; I. Cherng Chen

doi:10.1149/1.1885345

Well-aligned, vertically Al-doped ZnO nanowires synthesized on ZnO:Ga/glass templates

Cheng Liang Hsu, Shoou Jinn Chang, Hui Chuan Hung, Yan Ru Lin, Chorng Jye Huang, Yung Kuan Tseng, I. Cherng Chen

Research output: Contribution to journal › Article › peer-review

53 Citations (Scopus)

Abstract

High-density, single-crystal, vertically aligned, Al-doped ZnO nanowires with an Al content of 1.05 atom % were synthesized on ZnO:Ga/glass templates at 550°C. Although introducing Al did not change the physical dimensions of the ZnO nanowires, the lattice constant increased by 0.25% and the optical properties of the ZnO nanowires were degraded. However, the experimental results also showed that the threshold emission field can be significantly decreased from 16 to 10 V/μm, and the work function, φ, can also be reduced from 5.3 to 3.39 eV by introducing Al atoms into the ZnO nanowires.

Original language	English
Pages (from-to)	G378-G381
Journal	Journal of the Electrochemical Society
Volume	152
Issue number	5
DOIs	https://doi.org/10.1149/1.1885345
Publication status	Published - 2005

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

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title = "Well-aligned, vertically Al-doped ZnO nanowires synthesized on ZnO:Ga/glass templates",

abstract = "High-density, single-crystal, vertically aligned, Al-doped ZnO nanowires with an Al content of 1.05 atom % were synthesized on ZnO:Ga/glass templates at 550°C. Although introducing Al did not change the physical dimensions of the ZnO nanowires, the lattice constant increased by 0.25% and the optical properties of the ZnO nanowires were degraded. However, the experimental results also showed that the threshold emission field can be significantly decreased from 16 to 10 V/μm, and the work function, φ, can also be reduced from 5.3 to 3.39 eV by introducing Al atoms into the ZnO nanowires.",

author = "Hsu, {Cheng Liang} and Chang, {Shoou Jinn} and Hung, {Hui Chuan} and Lin, {Yan Ru} and Huang, {Chorng Jye} and Tseng, {Yung Kuan} and Chen, {I. Cherng}",

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doi = "10.1149/1.1885345",

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T1 - Well-aligned, vertically Al-doped ZnO nanowires synthesized on ZnO:Ga/glass templates

AU - Hsu, Cheng Liang

AU - Chang, Shoou Jinn

AU - Hung, Hui Chuan

AU - Lin, Yan Ru

AU - Huang, Chorng Jye

AU - Tseng, Yung Kuan

AU - Chen, I. Cherng

PY - 2005

Y1 - 2005

N2 - High-density, single-crystal, vertically aligned, Al-doped ZnO nanowires with an Al content of 1.05 atom % were synthesized on ZnO:Ga/glass templates at 550°C. Although introducing Al did not change the physical dimensions of the ZnO nanowires, the lattice constant increased by 0.25% and the optical properties of the ZnO nanowires were degraded. However, the experimental results also showed that the threshold emission field can be significantly decreased from 16 to 10 V/μm, and the work function, φ, can also be reduced from 5.3 to 3.39 eV by introducing Al atoms into the ZnO nanowires.

AB - High-density, single-crystal, vertically aligned, Al-doped ZnO nanowires with an Al content of 1.05 atom % were synthesized on ZnO:Ga/glass templates at 550°C. Although introducing Al did not change the physical dimensions of the ZnO nanowires, the lattice constant increased by 0.25% and the optical properties of the ZnO nanowires were degraded. However, the experimental results also showed that the threshold emission field can be significantly decreased from 16 to 10 V/μm, and the work function, φ, can also be reduced from 5.3 to 3.39 eV by introducing Al atoms into the ZnO nanowires.

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JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 5

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Well-aligned, vertically Al-doped ZnO nanowires synthesized on ZnO:Ga/glass templates

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