Well-aligned, vertically Al-doped ZnO nanowires synthesized on ZnO:Ga/glass templates

Cheng Liang Hsu, Shoou Jinn Chang, Hui Chuan Hung, Yan Ru Lin, Chorng Jye Huang, Yung Kuan Tseng, I. Cherng Chen

Research output: Contribution to journalArticlepeer-review

53 Citations (Scopus)


High-density, single-crystal, vertically aligned, Al-doped ZnO nanowires with an Al content of 1.05 atom % were synthesized on ZnO:Ga/glass templates at 550°C. Although introducing Al did not change the physical dimensions of the ZnO nanowires, the lattice constant increased by 0.25% and the optical properties of the ZnO nanowires were degraded. However, the experimental results also showed that the threshold emission field can be significantly decreased from 16 to 10 V/μm, and the work function, φ, can also be reduced from 5.3 to 3.39 eV by introducing Al atoms into the ZnO nanowires.

Original languageEnglish
Pages (from-to)G378-G381
JournalJournal of the Electrochemical Society
Issue number5
Publication statusPublished - 2005

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry


Dive into the research topics of 'Well-aligned, vertically Al-doped ZnO nanowires synthesized on ZnO:Ga/glass templates'. Together they form a unique fingerprint.

Cite this