Well width dependence for novel AlInAsSb/InGaAs double-barrier resonant tunneling diode

Yan Kuin Su; Cheng Hsien Wu; Jia Rong Chang; Kuo Ming Wu; Hsin Chuan Wang; Wen Bin Chen; Shin Jie You; Shoou Jinn Chang

doi:10.1016/S0038-1101(02)00050-3

Well width dependence for novel AlInAsSb/InGaAs double-barrier resonant tunneling diode

Yan Kuin Su, Cheng Hsien Wu, Jia Rong Chang, Kuo Ming Wu, Hsin Chuan Wang, Wen Bin Chen, Shin Jie You, Shoou Jinn Chang

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The novel Al_0.66In_0.34As_0.85Sb_0.15/In_0.53Ga_0.47As heterostructure has a large conduction band offset (about 1 eV). Taking the advantage of high conduction-band offset, it has been demonstrated to be a potential candidate for double-barrier resonant tunneling diodes (DBRTDs). Well width is an important parameter for the performance of a DBRTD. We fixed the barrier width and discussed the well width dependence for Al_0.66In_0.34As_0.85Sb_0.15/In_0.53Ga_0.47As DBRTD. Peak current densities exhibit a maximum at the 4 nm well width. A peak-to-valley current ratio of 46 with a peak current density of 22 kA/cm² at room temperature was demonstrated for the 4 nm-InGaAs-well.

Original language	English
Pages (from-to)	1109-1111
Number of pages	3
Journal	Solid-State Electronics
Volume	46
Issue number	8
DOIs	https://doi.org/10.1016/S0038-1101(02)00050-3
Publication status	Published - 2002 Aug

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1016/S0038-1101(02)00050-3

Fingerprint Dive into the research topics of 'Well width dependence for novel AlInAsSb/InGaAs double-barrier resonant tunneling diode'. Together they form a unique fingerprint.

Cite this

@article{489d05c4b6fa486a8e19df347382ff62,

title = "Well width dependence for novel AlInAsSb/InGaAs double-barrier resonant tunneling diode",

abstract = "The novel Al0.66In0.34As0.85Sb0.15/In0.53 Ga0.47As heterostructure has a large conduction band offset (about 1 eV). Taking the advantage of high conduction-band offset, it has been demonstrated to be a potential candidate for double-barrier resonant tunneling diodes (DBRTDs). Well width is an important parameter for the performance of a DBRTD. We fixed the barrier width and discussed the well width dependence for Al0.66In0.34As0.85Sb0.15/In0.53 Ga0.47As DBRTD. Peak current densities exhibit a maximum at the 4 nm well width. A peak-to-valley current ratio of 46 with a peak current density of 22 kA/cm2 at room temperature was demonstrated for the 4 nm-InGaAs-well.",

author = "Su, {Yan Kuin} and Wu, {Cheng Hsien} and Chang, {Jia Rong} and Wu, {Kuo Ming} and Wang, {Hsin Chuan} and Chen, {Wen Bin} and You, {Shin Jie} and Chang, {Shoou Jinn}",

year = "2002",

month = aug,

doi = "10.1016/S0038-1101(02)00050-3",

language = "English",

volume = "46",

pages = "1109--1111",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

number = "8",

}

TY - JOUR

T1 - Well width dependence for novel AlInAsSb/InGaAs double-barrier resonant tunneling diode

AU - Su, Yan Kuin

AU - Wu, Cheng Hsien

AU - Chang, Jia Rong

AU - Wu, Kuo Ming

AU - Wang, Hsin Chuan

AU - Chen, Wen Bin

AU - You, Shin Jie

AU - Chang, Shoou Jinn

PY - 2002/8

Y1 - 2002/8

N2 - The novel Al0.66In0.34As0.85Sb0.15/In0.53 Ga0.47As heterostructure has a large conduction band offset (about 1 eV). Taking the advantage of high conduction-band offset, it has been demonstrated to be a potential candidate for double-barrier resonant tunneling diodes (DBRTDs). Well width is an important parameter for the performance of a DBRTD. We fixed the barrier width and discussed the well width dependence for Al0.66In0.34As0.85Sb0.15/In0.53 Ga0.47As DBRTD. Peak current densities exhibit a maximum at the 4 nm well width. A peak-to-valley current ratio of 46 with a peak current density of 22 kA/cm2 at room temperature was demonstrated for the 4 nm-InGaAs-well.

AB - The novel Al0.66In0.34As0.85Sb0.15/In0.53 Ga0.47As heterostructure has a large conduction band offset (about 1 eV). Taking the advantage of high conduction-band offset, it has been demonstrated to be a potential candidate for double-barrier resonant tunneling diodes (DBRTDs). Well width is an important parameter for the performance of a DBRTD. We fixed the barrier width and discussed the well width dependence for Al0.66In0.34As0.85Sb0.15/In0.53 Ga0.47As DBRTD. Peak current densities exhibit a maximum at the 4 nm well width. A peak-to-valley current ratio of 46 with a peak current density of 22 kA/cm2 at room temperature was demonstrated for the 4 nm-InGaAs-well.

UR - http://www.scopus.com/inward/record.url?scp=0036680414&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036680414&partnerID=8YFLogxK

U2 - 10.1016/S0038-1101(02)00050-3

DO - 10.1016/S0038-1101(02)00050-3

M3 - Article

AN - SCOPUS:0036680414

VL - 46

SP - 1109

EP - 1111

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 8

ER -

Well width dependence for novel AlInAsSb/InGaAs double-barrier resonant tunneling diode

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Cite this