White-light emission from InGaN-GaN multiquantum-well light-emitting diodes with Si and Zn codoped active well layer

J. K. Sheu; C. J. Pan; G. C. Chi; C. H. Kuo; L. W. Wu; C. H. Chen; S. J. Chang; Y. K. Su

doi:10.1109/68.992574

White-light emission from InGaN-GaN multiquantum-well light-emitting diodes with Si and Zn codoped active well layer

J. K. Sheu, C. J. Pan, G. C. Chi, C. H. Kuo, L. W. Wu, C. H. Chen, S. J. Chang, Y. K. Su

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94 Citations (Scopus)

Abstract

Si and Zn codoped In_xGa_1-xN-GaN multiple-quantum-well (MQW) light-emitting diode (LED) structures were grown by metal-organic vapor phase epitaxy (MOVPE). It was found that we can observe a broad long-wavelength donor-acceptor (D-A) pair related emission at 500 nm∼560 nm. White light can thus be achieved by the combination of such a long-wavelength D-A pair emission with the InGaN bandedge related blue emission. It was also found that the electroluminescence (EL) spectra of such Si and Zn codoped InGaN-GaN MQW LEDs are very similar to those measured from phosphor-converted white LEDs. That is, we can achieve white light emission without the use of phosphor by properly adjusting the indium composition and the concentrations of the codoped Si and Zn atoms in the active well layers and the amount of injection current.

Original language	English
Pages (from-to)	450-452
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	14
Issue number	4
DOIs	https://doi.org/10.1109/68.992574
Publication status	Published - 2002 Apr

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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@article{4afb2986e38f4f84bca9fa4bd8e6f7ee,

title = "White-light emission from InGaN-GaN multiquantum-well light-emitting diodes with Si and Zn codoped active well layer",

abstract = "Si and Zn codoped InxGa1-xN-GaN multiple-quantum-well (MQW) light-emitting diode (LED) structures were grown by metal-organic vapor phase epitaxy (MOVPE). It was found that we can observe a broad long-wavelength donor-acceptor (D-A) pair related emission at 500 nm∼560 nm. White light can thus be achieved by the combination of such a long-wavelength D-A pair emission with the InGaN bandedge related blue emission. It was also found that the electroluminescence (EL) spectra of such Si and Zn codoped InGaN-GaN MQW LEDs are very similar to those measured from phosphor-converted white LEDs. That is, we can achieve white light emission without the use of phosphor by properly adjusting the indium composition and the concentrations of the codoped Si and Zn atoms in the active well layers and the amount of injection current.",

author = "Sheu, {J. K.} and Pan, {C. J.} and Chi, {G. C.} and Kuo, {C. H.} and Wu, {L. W.} and Chen, {C. H.} and Chang, {S. J.} and Su, {Y. K.}",

note = "Funding Information: Manuscript received September 24, 2001; revised December 13, 2001. This work was supported by the National Science Council Research under Grant NSC 90-2215-E-008-043 and Grant NSC 90-2112-M-008-046.",

year = "2002",

month = apr,

doi = "10.1109/68.992574",

language = "English",

volume = "14",

pages = "450--452",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

TY - JOUR

T1 - White-light emission from InGaN-GaN multiquantum-well light-emitting diodes with Si and Zn codoped active well layer

AU - Sheu, J. K.

AU - Pan, C. J.

AU - Chi, G. C.

AU - Kuo, C. H.

AU - Wu, L. W.

AU - Chen, C. H.

AU - Chang, S. J.

AU - Su, Y. K.

N1 - Funding Information: Manuscript received September 24, 2001; revised December 13, 2001. This work was supported by the National Science Council Research under Grant NSC 90-2215-E-008-043 and Grant NSC 90-2112-M-008-046.

PY - 2002/4

Y1 - 2002/4

N2 - Si and Zn codoped InxGa1-xN-GaN multiple-quantum-well (MQW) light-emitting diode (LED) structures were grown by metal-organic vapor phase epitaxy (MOVPE). It was found that we can observe a broad long-wavelength donor-acceptor (D-A) pair related emission at 500 nm∼560 nm. White light can thus be achieved by the combination of such a long-wavelength D-A pair emission with the InGaN bandedge related blue emission. It was also found that the electroluminescence (EL) spectra of such Si and Zn codoped InGaN-GaN MQW LEDs are very similar to those measured from phosphor-converted white LEDs. That is, we can achieve white light emission without the use of phosphor by properly adjusting the indium composition and the concentrations of the codoped Si and Zn atoms in the active well layers and the amount of injection current.

AB - Si and Zn codoped InxGa1-xN-GaN multiple-quantum-well (MQW) light-emitting diode (LED) structures were grown by metal-organic vapor phase epitaxy (MOVPE). It was found that we can observe a broad long-wavelength donor-acceptor (D-A) pair related emission at 500 nm∼560 nm. White light can thus be achieved by the combination of such a long-wavelength D-A pair emission with the InGaN bandedge related blue emission. It was also found that the electroluminescence (EL) spectra of such Si and Zn codoped InGaN-GaN MQW LEDs are very similar to those measured from phosphor-converted white LEDs. That is, we can achieve white light emission without the use of phosphor by properly adjusting the indium composition and the concentrations of the codoped Si and Zn atoms in the active well layers and the amount of injection current.

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JF - IEEE Photonics Technology Letters

SN - 1041-1135

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White-light emission from InGaN-GaN multiquantum-well light-emitting diodes with Si and Zn codoped active well layer

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