White light generation from 2,3-Dibutoxy-1,4-poly(phenylene vinylene)-CdSe/ZnS quantum dot-InGaN/GaN quantum well dual hybrid light-emitting diodes

In this paper, we have demonstrated fabrication and characterization of 2,3-dibutoxy-1,4-poly(phenylene vinylene) (DBPPV)-CdSe/ZnS core/shell quantum dots (QDs)-InGaN/GaN quantum wells (QWs) hybrid white light-emitting diodes (WLEDs). With appropriately adjusting the amount of red-emitting QDs and yellowish green-emitting polymer precoated on a blue light-emitting chip, pure white light from the device can be generated. White light with Commission Internationale de l'Eclairage (CIE) chromaticity coordinates of (0.33; 0.34), color rendering index (CRI) of 76 and correlated color temperature (CCT) of 5600K is characterized. As the WLED is operated at 20 mA, the luminous flux of 0.55 lm and luminous efficacy of 330 lm/W are obtained. Besides, with injection current increasing from 10 to 60 mA, the CCT and CRI are decreased by 5 and 17%, respectively. The divergence angle (the full angle at 1=e intensity) of the WLED is measured as 98°.